VS-20ETS..PbF, VS-20ATS..PbF
www.vishay.com
Vishay Semiconductors
High Voltage Input Rectifier Diode, 20 A
TO-220AC
TO-220AB
FEATURES
• Designed
and
JEDEC-JESD47
qualified
according
to
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Base
cathode
2
Cathode to
base
2
• Typical applications are in input rectification and these
products are designed to be used with Vishay HPP
switches and output rectifiers which are available in
identical package outlines
DESCRIPTION
1
Cathode
3
Anode
1
Anode
3
Anode
VS-20ETS..PbF
VS-20ATS..PbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-220AC, TO-220AB
20 A
800 V to 1200 V
1.1 V
300 A
150 °C
Single die, common anode
The VS-20ETS..PbF, VS-20ATS..PbF rectifier high voltage
series has been optimized for very low forward voltage drop,
with moderate leakage. The glass passivation technology
used has reliable operation up to 150 °C junction
temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800/1200
300
1.0
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETS08PbF,
VS-20ATS08PbF
VS-20ETS12PbF,
VS-20ATS12PbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1
1300
I
RRM
AT 150 °C
mA
Revision: 18-Aug-11
Document Number: 94341
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
Marking device
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 40 to 150
1.3
°C/W
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
20ETS08
20ETS12
20ATS08
20ATS12
Revision: 18-Aug-11
Document Number: 94341
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
www.vishay.com
Vishay Semiconductors
35
150
Maxiumum Average Forward
Power Loss (W)
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
Ø
30
25
20
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
15
10
5
0
Ø
30°
90
60°
90° 120°
180°
Conduction period
T
J
= 150 °C
0
5
10
15
20
25
0
2
4
6
8
10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
Ø
Peak Half Sine Wave
Forward Current (A)
250
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction period
200
150
30°
60°
90°
120°
180°
DC
100
50
0
5
10
15
20
25
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
30
Maxiumum Average Forward
Power Loss (W)
25
20
15
10
5
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
300
250
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
200
150
Ø
Conduction angle
T
J
= 150 °C
0
100
50
0
4
8
12
16
20
24
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 18-Aug-11
Document Number: 94341
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 18-Aug-11
Document Number: 94341
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETS..PbF, VS-20ATS..PbF
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
20
2
-
-
-
E
3
T
4
S
5
12
6
PbF
7
Vishay Semiconductors product
Current rating (20 = 20 A)
Circuit configuration:
E = TO-220AC
A = TO-220AB
4
5
-
-
Package:
T = TO-220
Type of silicon:
S = Standard recovery rectifier
08 = 800 V
12 = 1200 V
6
7
-
-
Voltage code x 100 = V
RRM
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95180
www.vishay.com/doc?95181
Revision: 18-Aug-11
Document Number: 94341
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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