20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
2
• The fully isolated package (V
INS
= 2500 V
RMS
)
is UL E78996 approved
• Designed and qualified for industrial level
APPLICATIONS
TO-220AC FULL-PAK
1
Cathode
3
Anode
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
• Input rectifications where severe
conducted EMI should be met
restrictions
PRODUCT SUMMARY
V
F
at 20 A
I
FSM
V
RRM
< 1.31 V
355 A
1000 V to 1200 V
DESCRIPTION
The 20ETF..FPPbF fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
20 A, T
J
= 25 °C
Range
Sinusoidal waveform
CHARACTERISTICS
VALUES
1000 to 1200
20
355
95
1.31
- 40 to 150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
20ETF10FPPbF
20ETF12FPPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 97 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
300
355
450
635
6350
A
2
s
A
2
s
A
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 93222
Revision: 26-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery
Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.31
11.88
0.93
0.1
V
R
= Rated V
RRM
mA
6
UNITS
V
m
V
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 Apk
25 A/μs
25 °C
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
0.07
minimum
Mounting torque
maximum
Marking device
Case style TO-220AC FULL-PAK
20ETF12FP
12 (10)
6 (5)
oz.
kgf · cm
(lbf · in)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
1.5
62
1.5
2
g
°C/W
UNITS
°C
20ETF10FP
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93222
Revision: 26-Jul-10
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
150
R
thJC
(DC) = 0.9 K/W
35
Vishay Semiconductors
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
30
25
20
180°
120°
90°
60°
30°
RMS limit
130
Ø
Conduction angle
120
30°
110
60°
90°
120°
180°
100
0
5
10
15
20
25
15
10
5
0
0
5
10
15
20
25
Ø
Conduction period
T
J
= 150 °C
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
R
thJC
(DC) = 0.9 K/W
350
300
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
Ø
Peak Half Sine Wave
Forward Current (A)
250
200
150
100
130
Conduction period
120
60°
110
30°
90°
120°
180°
100
0
5
10
15
20
25
30
35
DC
50
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
400
180°
120°
90°
60°
30°
RMS limit
350
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
10
5
0
0
Peak Half Sine Wave
Forward Current (A)
300
250
200
150
100
50
0.01
Ø
Conduction angle
T
J
= 150 °C
5
10
15
20
25
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93222
Revision: 26-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Vishay Semiconductors
1000
Fast Soft Recovery
Rectifier Diode, 20 A
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
T
J
= 25 °C
0.6
6
T
J
= 25 °C
I
FM
= 30 A
5
I
FM
= 20 A
4
3
I
FM
= 10 A
2
1
0
0
50
100
150
200
0
50
100
150
200
I
FM
= 5 A
I
FM
= 1 A
0.5
0.4
0.3
0.2
0.1
0
I
FM
= 5 A
I
FM
= 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Q
rr
- Maximum Reverse
Recovery Charge (µC)
t
rr
- Maximum Reverse
Recovery Time (µs)
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
1.2
T
J
= 150 °C
10
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
t
rr
- Maximum Reverse
Recovery Time (µs)
Q
rr
- Maximum Reverse
Recovery Charge (µC)
0.9
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
8
6
I
FM
= 10 A
4
I
FM
= 5 A
2
I
FM
= 1 A
0.6
0.3
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93222
Revision: 26-Jul-10
20ETF10FPPbF, 20ETF12FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
25
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
10
I
FM
= 1 A
5
35
T
J
= 150 °C
30
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
Vishay Semiconductors
I
rr
- Maximum Reverse
Recovery Current (A)
I
rr
- Maximum Reverse
Recovery Current (A)
20
25
20
15
10
15
I
FM
= 1 A
5
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
(DC operation)
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Document Number: 93222
Revision: 26-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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