20ETF..FPPbF Soft Recovery Series
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
cathode
• The fully isolated package (V
INS
= 2500 V
RMS
) is
UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
2
APPLICATIONS
1
Cathode
3
Anode
• Output rectification and
choppers and converters
freewheeling
in
inverters,
on
TO-220AC FULL-PAK
• Input rectifications where severe
conducted EMI should be met
restrictions
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
< 1.2 V
300 A
200 V to 600 V
DESCRIPTION
The 20ETF..FPPbF soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
10 A, T
J
= 25 °C
1 A, 100 A/μs
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
200 to 600
300
1.2
60
- 40 to 150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
20ETF02FPPbF
20ETF04FPPbF
20ETF06FPPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
5
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 94 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
20ETF..FPPbF Soft Recovery Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
TEST CONDITIONS
20 A, T
J
= 25 °C
60 A, T
J
= 25 °C
VALUES
1.30
1.67
12.5
0.9
0.1
5.0
UNITS
V
m
V
mA
Fast Soft Recovery
Rectifier Diode, 20 A
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 Apk
100 A/μs
25 °C
Typical
VALUES
160
10
1.25
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
1.5
62
1.5
2
0.07
6 (5)
12 (10)
20ETF02FP
Marking device
Case style TO-220 FULL-PAK
20ETF04FP
20ETF06FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94095
Revision: 06-Aug-10
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
150
45
Vishay Semiconductors
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
30°
80
0
5
10
Maximum Average Forward
Power Loss (W)
20ETF.. Series
R
thJC
(DC) = 1.5 K/W
40
35
30
25
20
15
10
5
0
0
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
Ø
Conduction period
60° 90° 120° 180°
15
20
25
20ETF.. Series
T
J
= 150 °C
5
10
15
20
25
30
35
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
20ETF.. Series
R
thJC
(DC) = 1.5 K/W
At any rated load condition and with
rated V
RRM
applied following surge.
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90°
90
80
0
5
10
15
60°
Peak Half Sine Wave
Forward Current (A)
250
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
200
Conduction period
30°
150
100
20ETF.. Series
50
120°
180°
20
25
DC
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
550
180°
120°
90°
60°
30°
RMS limit
500
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
Peak Half Sine Wave
Forward Current (A)
450
400
350
300
250
200
150
100
20ETF.. Series
0.01
Ø
10
5
0
0
5
10
Conduction angle
20ETF.. Series
T
J
= 150 °C
15
20
25
50
0.001
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
20ETF..FPPbF Soft Recovery Series
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
Fast Soft Recovery
Rectifier Diode, 20 A
4.0
3.5
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
Q
rr
- Maximum Reverse
Recovery Charge (µC)
3.0
2.5
2.0
1.5
1.0
0.5
100
I
FM
= 20 A
I
FM
= 10 A
10
T
J
= 25 °C
T
J
= 150 °C
20ETF.. Series
I
FM
= 5 A
I
FM
= 1 A
1
0
1
2
3
4
5
0
0
200
400
600
800
1000
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.20
20ETF.. Series
T
J
= 25 °C
10
9
20ETF.. Series
T
J
= 150 °C
Q
rr
- Maximum Reverse
Recovery Charge (µC)
t
rr
- Maximum Reverse
Recovery Time (µs)
8
7
6
5
4
3
2
1
0
I
FM
= 30 A
I
FM
= 20 A
0.15
I
FM
= 30 A
0.10
I
FM
= 20 A
I
FM
= 10 A
0.05
I
FM
= 5 A
I
FM
= 1 A
0
0
200
400
600
800
1000
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.5
20ETF.. Series
T
J
= 150 °C
70
60
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
20
10
t
rr
- Maximum Reverse
Recovery Time (µs)
I
rr
- Maximum Reverse
Recovery Current (A)
0.4
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
50
40
30
0.3
0.2
0.1
I
FM
= 1 A
0
200
400
600
800
1000
0
0
200
400
600
800
1000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94095
Revision: 06-Aug-10
20ETF..FPPbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 20 A
100
20ETF.. Series
T
J
= 150 °C
Vishay Semiconductors
I
rr
- Maximum Reverse
Recovery Current (A)
80
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
60
40
I
FM
= 5 A
20
I
FM
= 1 A
0
0
200
400
600
800
1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
1
0.1
Single pulse
20ETF.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Document Number: 94095
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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