VS-20CUT10, VS-20CWT10FN
Vishay Semiconductors
High Performance Schottky Generation 5.0, 2 x 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
I-PAK (TO-251AA)
Base
common
cathode
4
D-PAK (TO-252AA)
Base
common
cathode
4
• Extremely low reverse leakage
• Optimized V
F
vs. I
R
trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Compliant to RoHS Directive 2002/95/EC
3
1
Anode
2 Anode
Common
cathode
2
Common
3
1
Anode cathode Anode
VS-20CUT10
VS-20CWT10FN
APPLICATIONS
• High efficiency SMPS
• High frequency switching
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
D-PAK (TO-252AA),
I-PAK (TO-251AA)
2 x 10 A
100 V
0.66 V
4 mA at 125 °C
175 °C
Common cathode
54 mJ
• Output rectification
• Reverse battery protection
• Freewheeling
• DC/DC systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
V
F
T
J
10 Apk, T
J
= 125 °C (typical, per leg)
Range
CHARACTERISTICS
VALUES
100
0.615
- 55 to 175
UNITS
V
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL
V
R
TEST CONDITIONS
T
J
= 25 °C
VS-20CUT10
VS-20CWT10FN
100
UNITS
V
Document Number: 94651
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-20CUT10, VS-20CWT10FN
Vishay Semiconductors
High Performance Schottky
Generation 5.0, 2 x 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 159 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration
so that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
(see fig. 8)
Following any rated load
condition and with rated
V
RRM
applied
VALUES
10
20
610
A
110
54
I
AS
at
T
J
max.
mJ
UNITS
A
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche
energy per leg
Repetitive avalanche current per leg
I
AR
A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
10 A
Forward voltage drop per leg
V
FM (1)
20 A
10 A
20 A
Reverse leakage current per leg
Junction capacitance per leg
Series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
TYP.
0.735
0.840
0.615
0.730
-
-
400
8.0
-
MAX.
0.810
0.890
0.660
0.770
50
4
-
-
10 000
μA
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
Case style I-PAK
Case style D-PAK
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
- 55 to 175
2
R
thJC
DC operation
1
R
thCS
0.3
0.3
0.01
20CUT10
20CWT10FN
g
oz.
°C/W
UNITS
°C
Marking device
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94651
Revision: 04-Jan-11
VS-20CUT10, VS-20CWT10FN
High Performance Schottky
Generation 5.0, 2 x 10 A
100
175°C
10
150°C
1
0.1
75°C
0.01
0.001
0.0001
0
20
40
60
80
100
50°C
25°C
125°C
100°C
Vishay Semiconductors
100
Reverse Current - I
R
(mA)
Tj = 175°C
Instantaneous Forward Current - I
F
(A)
Reverse Voltage - V
R
(V)
10
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
Junction Capacitance - C
T
(pF)
Tj = 125°C
100
Tj = 25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
t
1
, Rectangular Pulse Duration (Seconds)
1E+00
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94651
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-20CUT10, VS-20CWT10FN
Vishay Semiconductors
180
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
High Performance Schottky
Generation 5.0, 2 x 10 A
10
180°
120°
90°
60°
30°
175
170
165
160
155
150
see note (1)
Square wave (D=0.50)
80% rated Vr applied
8
DC
6
RMS Limit
4
DC
2
145
0
2
4
6
8
10 12 14 16
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
0
0
3
6
9
12
15
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
FSM
(A)
100
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94651
Revision: 04-Jan-11
VS-20CUT10, VS-20CWT10FN
High Performance Schottky
Generation 5.0, 2 x 10 A
100
Vishay Semiconductors
Avalanche Current (A)
Tj = 25°C
10
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Avalanche Energy (mJ)
10
Tj = 25°C
Tj = 125°C
Tj = 175°C
1
1
10
100
Rectangular Pulse Duration ( μsec)
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Document Number: 94651
Revision: 04-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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