VS-16TTS16SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable Phase Control SCR, 16 A
FEATURES
2
Anode
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
D
2
PAK
1
Cathode
3
Gate
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
are in identical package outlines
PRODUCT SUMMARY
V
T
at 10 A
I
TSM
V
RRM
< 1.4 V
200 A
1600 V
DESCRIPTION
The VS-16TTS16SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
2.5
6.3
14.0
THREE-PHASE BRIDGE
3.5
9.5
18.5
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
10
16
1600
200
1.4
500
150
- 40 to 125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-16TTS16SPbF
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1600
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
1600
I
RRM
/I
DRM
AT 125 °C
mA
10
Document Number: 94590
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VS-16TTS16SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable
Phase Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
10 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
RRM
/V
DRM
100
200
500
150
V/μs
A/μs
TEST CONDITIONS
T
C
= 93 °C, 180° conduction, half sine wave
VALUES
TYP.
10
16
170
200
144
200
2000
1.4
24.0
1.1
0.5
10
150
mA
A
2
s
A
2
s
V
m
V
A
MAX.
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A
Anode supply = 6 V, resistive load
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
T
J
= 125 °C, V
DRM
= Rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94590
Revision: 16-Jul-10
VS-16TTS16SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient
Approximate weight
Marking device
Case style D
2
PAK (SMD-220)
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA
For 10 s (1.6 mm from case)
DC operation
PCB mount
(1)
Vishay Semiconductors
TEST CONDITIONS
VALUES
- 40 to 125
240
1.3
UNITS
°C
°C/W
40
2
0.07
16TTS16S
g
oz.
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
Maximum Allowable Case Temperature (°C)
120
115
110
105
100
95
90
0
2
16TTS.. Series
R
thJC
(DC) = 1.3 °C/W
Max imum Average On-state Power Loss (W)
125
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10 11
Average On-state Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
30°
60°
90°
120°
180°
4
6
8
10
12
16TTS.. Series
T
J
= 125°C
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Max imum Average On-state Power Loss (W)
125
Maximum Allowable Case Temperature (°C)
120
115
Conduction Period
25
DC
180°
120°
90°
60°
30°
16TTS.. Series
R
thJC
(DC) = 1.3 °C/W
20
110
105
100
95
90
0
2
4
6
8
10
12
14
16
Average On-state Current (A)
30°
15
RMS Limit
10
Conduction Period
60°
90°
120°
180° DC
5
16TTS.. Series
T
J
= 125°C
0
2
4
6
8
10
12
14
16
18
0
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Document Number: 94590
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VS-16TTS16SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable
Phase Control SCR, 16 A
Peak Half Sine Wave Forward Current (A)
200
180
160
140
120
100
Peak Half Sine Wave On-state Current (A)
180
160
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
140
120
100
16TTS..Series
80
1
10
100
Number Of Equal Amplitude Half C ycle Current Pulses (N)
16TTS.. Series
80
0.01
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
16TTS.. Series
Instantaneous On-state Current (A)
100
10
T
J
= 25°C
T
J
= 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
16TTS.. Series
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94590
Revision: 16-Jul-10
VS-16TTS16SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
100
Vishay Semiconductors
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5
µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
16TTS.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
16
2
-
-
-
-
-
-
-
-
T
3
T
4
S
5
16
6
S
7
TRL PbF
8
9
HPP product suffix
Current rating
Circuit configuration:
T = Single thyristor
Package:
T = TO-220AC
Type of silicon:
S = Standard recovery rectifier
Voltage rating: Voltage code x 100 = V
RRM
(16 = 1600 V)
S = TO-220 D
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95054
www.vishay.com/doc?95032
Document Number: 94590
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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