VS-80EPS16PbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 80 A
DESCRIPTION/FEATURES
Base
cathode
4, 2
The VS-80EPS16PbF rectifier High Voltage
Series has been optimized for very low forward
voltage drop, with moderate leakage. The
glass passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay
Semiconductors switches and output rectifiers which are
available in identical package outlines.
This product has been designed and qualified for industrial
level.
TO-247AC
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 80 A
I
FSM
V
RRM
1.17 V
1450 A
1600 V
• Compliant to RoHS Directive 2002/95/EC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
80 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
80
1600
1450
1.17
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-80EPS16PbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 100 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1450
1500
10 500
11 250
105 000
A
2
s
A
2
s
A
UNITS
Document Number: 94348
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EPS16PbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
80 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
80EPS16
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
150
150
Maximum Allowable Case
Temperature (°C)
Maximum Allowable Case
Temperature (°C)
140
130
80EPS.. Series
R
thJC
(DC) = 0.35 K/W
80EPS.. Series
R
thJC
(DC) = 0.35 K/W
140
130
120
110
100
Ø
120
110
Conduction angle
Ø
Conduction period
30°
60°
90°
120°
180°
DC
90
30°
100
60°
90°
90
80
120°
180°
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following:
Document Number: 94348
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EPS16PbF High Voltage Series
Input Rectifier Diode, 80 A
Vishay Semiconductors
120
1600
Maximum Average Forward
Power Loss (W)
100
80
60
Peal Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
1400
RMS limit
1200
1000
800
600
400
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
40
20
0
Conduction angle
80EPS.. Series
T
J
= 150 °C
80EPS.. Series
0
10
20
30
40
50
60
70
80
90
1
10
100
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Number of Equal Amplitude Half
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
1800
Maximum Average Forward
Power Loss (W)
140
120
100
80
60
40
20
0
Peak Half Sine Wave
Forward Current (A)
DC
180°
120°
90°
60°
30°
1600
1400
1200
1000
800
600
400
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
RMS limit
Ø
Conduction period
80EPS.. Series
T
J
= 150 °C
80EPS.. Series
0.01
0.1
1
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
1000
100
T
J
= 25 °C
T
J
= 150 °C
10
80EPS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward
Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Document Number: 94348
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80EPS16PbF High Voltage Series
Vishay Semiconductors
Input Rectifier Diode, 80 A
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
80EPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
80
2
E
3
P
4
S
5
16
6
PbF
7
Vishay Semiconductors product
Current rating (80 = 80 A)
Circuit configuration:
E = Single diode
Package:
P = TO-247AC
Type of silicon:
S = Standard recovery rectifier
Voltage rating (16 = 1600 V)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com
4
For technical questions within your region, please contact one of the following:
Document Number: 94348
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
DIMENSIONS
in millimeters and inches
(3)
B
(2) R/2
Q
2xR
(2)
1
(5) L1
C
L
See view B
2 x b2
3xb
0.10
M
C A
M
2x e
b4
A1
C
A
(4)
E1
0.01
M
D B
M
View A - A
2
3
E
N
S
A2
A
D2
A
(6) Ø P
Ø K
M
DB
M
A
(Datum B)
FP1
Vishay Semiconductors
D
D
Thermal pad
4
D1 (4)
Planting
(b1, b3, b5)
Base metal
D DE
E
C
C
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(c)
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
NOTES
SYMBOL
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
3
4
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
-
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
-
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
-
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
-
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
