80EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
DESCRIPTION/FEATURES
Base
cathode
4, 2
The 80EPS..PbF rectifier High Voltage Series
has been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product has been designed and qualified for industrial
level.
Compliant to RoHS directive 2002/95/EC.
TO-247AC
1
Anode
3
Anode
PRODUCT SUMMARY
V
F
at 80 A
I
FSM
V
RRM
1.17 V
1450 A
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
80 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
Range
VALUES
80
800/1200
1450
1.17
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
80EPS08PbF
80EPS12PbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 100 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
80
1450
1500
10 500
14 000
105 000
A
2
s
A
2
√s
A
UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
80EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
80 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.17
3.17
0.73
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
80EPS08
80EPS12
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
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For technical questions, contact:
diodestech@vishay.com
Document Number: 94347
Revision: 07-Jul-09
80EPS..PbF High Voltage Series
Input Rectifier Diode, 80 A
Vishay High Power Products
150
160
Maximum Allowable Case
Temperture (°C)
140
130
120
110
Maximum Average Forward
Power Loss (W)
80EPS.. Series
R
thJC
(DC) = 0.35 K/W
140
120
100
80
60
40
20
0
Ø
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
Ø
30°
100
90
80
60°
90°
120°
180°
Conduction period
80EPS.. Series
T
J
= 150 °C
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
1600
80EPS.. Series
R
thJC
(DC) = 0.35 K/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
1400
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
Forward Current (A)
Ø
1200
1000
800
600
80EPS.. Series
Conduction period
30°
60°
90°
120°
180°
DC
400
0
20
40
60
80
100
120
140
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitudr Halfe
Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
120
Maximum Average Forward
Power Loss (W)
100
80
60
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
1800
1600
1400
1200
1000
800
600
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Ø
40
20
0
Conduction angle
80EPS.. Series
T
J
= 150 °C
80EPS.. Series
400
0
10
20
30
40
50
60
70
80
90
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
80EPS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 80 A
Instantaneous Forward Current (A)
1000
100
T
J
= 25 °C
10
T
J
= 150 °C
80EPS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state value
(DC operation)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
80EPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
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For technical questions, contact:
diodestech@vishay.com
Document Number: 94347
Revision: 07-Jul-09
80EPS..PbF High Voltage Series
Input Rectifier Diode, 80 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
80
1
1
2
3
4
5
6
-
-
-
-
-
-
E
2
P
3
S
4
12
5
PbF
6
Current rating (80 = 80 A)
Circuit configuration:
E = Single diode
Package:
P = TO-247AC
Type of silicon:
S = Standard recovery rectifier
Voltage ratings
None = Standard production
PbF = Lead (Pb)-free
08 = 800 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95223
www.vishay.com/doc?95226
Document Number: 94347
Revision: 07-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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