VS-175BGQ045
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
Cathode
Anode
PowerTab
®
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
PowerTab
®
175 A
45 V
0.7 V
640 mA at 125 °C
150 °C
Single die
40 mJ
• PowerTab
®
package
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-175BGQ045 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
175 A
pk
(typical)
T
J
Range
CHARACTERISTICS
Rectangular waveform
T
C
VALUES
175
103
45
8700
0.63
150
- 55 to 150
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
175BGQ045
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 6 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
C
= 103 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
175
8700
A
1550
40
6
mJ
A
UNITS
A
Revision: 17-Jun-11
Document Number: 94582
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-175BGQ045
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
100 A
Forward voltage drop
V
FM (1)
175 A
100 A
175 A
T
J
= 150 °C, V
R
= 45 V
Reverse leakage current
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
R
= Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 150 °C
TYP.
0.55
0.67
0.49
0.63
1200
0.6
360
5600
3.5
10 000
MAX.
0.58
0.75
0.54
0.7
2000
2
640
pF
nH
V/μs
mA
V
UNITS
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style PowerTab
®
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
0.25
°C/W
0.20
5
0.18
1.2 (10)
2.4 (20)
g
oz.
N·m
(lbf · in)
UNITS
°C
Mounting torque
Marking device
175BGQ045
Revision: 17-Jun-11
Document Number: 94582
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-175BGQ045
www.vishay.com
Vishay Semiconductors
10000
1000
100
10
1
0.1
0.01
1000
Reverse Current - I
R
(mA)
150°C
125°C
100°C
75°C
50°C
25°C
Instantaneous Forward Current - I
F
(A)
100
Tj = 150°C
0
5
10
15
20
25
30
35
40
45
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
(pF)
T
10
Junction Capacitance - C
T = 25°C
J
Tj = 125°C
Tj = 25°C
1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1000
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse
Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.5
D = 0.33
0.1
D = 0.25
D = 0.2
D = 0.75
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 17-Jun-11
Document Number: 94582
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-175BGQ045
www.vishay.com
Vishay Semiconductors
200
160
Allowable Case Temperature (°C)
140
120
100
80
60
0
50 100 150 200 250 300
Average Forward Current - I
F
(AV)
(A)
Square wave (D=0.50)
80% rated Vr applied
see note (1)
Average Power Loss - (Watts)
150
180°
120°
90°
60°
30°
DC
RMS Limit
100
DC
50
0
0
50
100
150
200
250
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Non-Repetitive S
urge Current - I
FS
(A)
M
10000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following S
urge
1000
10
100
1000
10000
S
quare Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Document Number: 94582
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Revision: 17-Jun-11
VS-175BGQ045
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
-
-
-
-
175 BGQ 045
2
3
4
Vishay Semiconductors product
Current rating
Essential part number
Voltage code = V
RRM
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Application note
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95179
Revision: 17-Jun-11
Document Number: 94582
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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