VS-100BGQ045
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 100 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
Cathode
Anode
PowerTab
®
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• Designed and qualified according to JEDEC-JESD47
• PowerTab
®
package
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
PowerTab
®
100 A
45 V
0.71 V
320 mA at 125 °C
150 °C
Single die
40 mJ
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ045 Schottky rectifier has been optimized
for ultralow forward voltage drop specifically for low voltage
output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
100 A
pk
(typical)
T
J
Range
CHARACTERISTICS
Rectangular waveform
T
C
VALUES
100
97
45
4400
0.65
150
- 55 to 150
UNITS
A
°C
V
A
V
°C
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
100BGQ045
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 6 A, L = 2 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
C
= 97 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
100
4400
A
830
40
6
mJ
A
UNITS
A
Revision: 17-Jun-11
Document Number: 94580
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ045
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
50 A
Forward voltage drop
V
FM (1)
100 A
50 A
100 A
T
J
= 150 °C, V
R
= 45 V
Reverse leakage current
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
R
= Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 150 °C
TYP.
0.54
0.69
0.48
0.65
600
0.3
180
2700
3.5
10 000
MAX.
0.58
0.77
0.52
0.71
1000
1
320
pF
nH
V/μs
mA
V
UNITS
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C
Measured from tab to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style PowerTab
®
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
0.50
°C/W
0.30
5
0.18
1.2 (10)
2.4 (20)
g
oz.
N·m
(lbf · in)
UNITS
°C
Mounting torque
Marking device
100BGQ045
Revision: 17-Jun-11
Document Number: 94580
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ045
www.vishay.com
Vishay Semiconductors
1000
150°C
1000
Reverse Current - I
R
(mA)
100
125°C
100°C
Tj = 150°C
10
75°C
50°C
25°C
1
Instantaneous Forward Current - I
F
(A)
0.1
100
0.01
0
5
10
15
20
25
30
35
40
45
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
Junction Ca pacita nc e - C
T
(pF
)
10
T = 25°C
J
Tj = 125°C
Tj = 25°C
1000
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
100
0
10
20
30
40
50
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance vs. Reverse
Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 17-Jun-11
Document Number: 94580
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ045
www.vishay.com
Vishay Semiconductors
120
180
Allowable Case Temperature (°C)
160
140
120
100
80
60
0
20 40 60 80 100 120 140 160
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Average Power Loss - (Watts)
100
80
60
40
20
0
0
DC
180°
120°
90°
60°
30°
RMS Limit
DC
Square wave (D=0.50)
80% rated Vr applied
see note (1)
30
60
90
120
150
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
10000
Non-R
epetitive S
urge Current - I
FS
(A)
M
1000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following S
urge
100
10
100
1000
10000
S
quare Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 17-Jun-11
Document Number: 94580
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-100BGQ045
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
-
-
-
-
100 BGQ 045
2
3
4
Vishay Semiconductors product
Current rating
Essential part number
Voltage code = V
RRM
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Application note
www.vishay.com/doc?95240
www.vishay.com/doc?95370
www.vishay.com/doc?95179
Revision: 17-Jun-11
Document Number: 94580
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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