Ordering number : ENN7516
50C02MH
NPN Epitaxial Planar Silicon Transistor
50C02MH
Low-Frequency
General-Purpose Amplifier Applications
Applications
•
Package Dimensions
unit : mm
2194A
[50C02MH]
0.25
Low-frequency Amplifer, high-speed switching,
small motor drive, muting circuit.
Features
•
•
0.3
3
•
•
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA].
Ultrasmall package facilitates miniaturization in end
products.
Small ON-resistance (Ron).
0.15
2.1
1.6
0.25
0.65
2.0
(Bottom view)
0.07
2
1
3
1 : Base
2 : Emitter
3 : Collector
1
2
(Top view)
0.85
SANYO : MCPH3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a ceramic board (600mm
!0.8mm)
2
Conditions
Ratings
60
50
5
500
1.0
600
150
--55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=10mA
VCE=10V, IC=50mA
300
500
Conditions
Ratings
min
typ
max
100
100
800
MHz
Unit
nA
nA
Marking : CM
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo
http://semicon.sanyo.com/en/network
TOKYO, 110-8534 JAPAN
Bldg., 1-10,
Chome,
Ueno,
Taito-ku,
TOKYO OFFICE Tokyo Bldg., 1-10, 1
1 Chome,
Ueno,
Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100122 No.7516-1/4
50C02MH
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=10V, f=1MHz
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=10µA, IE=0
IC=1mA, RBE=∞
IE=10µA, IC=0
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
60
50
5
30
340
55
Ratings
min
typ
2.8
50
0.9
100
1.2
max
Unit
pF
mV
V
V
V
V
ns
ns
ns
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
220µF
VBE= --5V
+
470µF
VCC=25V
RB
RL
IC=20IB1= --20IB2=200mA
500
IC -- VCE
A 1
5mA
600
IC -- VBE
VCE=2V
450
7mA
Collector Current, IC -- mA
30mA
350
300
250
200
150
100
50
0
0
3mA
Collector Current, IC -- mA
20m
400
A
10m
8mA
5mA
500
400
2mA
1mA
600µA
200µA
300
°
C
25
°
C
200
100
IB=0
100
200
300
400
500
600
700
800
900
1000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT05107
Collector-to-Emitter Voltage, VCE -- mV
1000
7
5
3
2
IT05106
3
Ta=75
°C
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
Ta=7
5
--25
°
C
IC / IB=10
2
3
VCE=2V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
25
°C
--25°C
DC Current Gain, hFE
100
5
3
2
100
7
5
3
2
10
7
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05108
5
1.0
2
3
5 7 10
2
3
--2
5 7 100
5
°
C
25
°
C
Ta
=7
5
°
C
7
5 7 1000
IT05411
Collector Current, IC -- mA
Collector Current, IC -- mA
No.7516-2/4
50C02MH
3
VCE(sat) -- IC
IC / IB=20
1000
7
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
5
3
2
100
7
5
Ta
=7
5
°
C
°
C
°
C
25
--2
5
100
7
5
3
2
25
°
C
C
5
°
=7
C
Ta
5
°
--2
3
2
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05109
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05110
Collector Current, IC -- mA
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
10
Cob -- VCB
f=1MHz
IC / IB=20
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
Output Capacitance, Cob -- pF
2
3
5 7 1000
IT05111
5
7
5
1.0
7
5
3
2
25
°C
Ta= --25°C
3
75
°C
2
0.1
1.0
2
3
5 7 10
2
3
5 7 100
1.0
1.0
2
3
5
7
10
2
3
5
7
100
Collector Current, IC -- mA
1000
fT -- IC
Collector-to-Base Voltage, VCB -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
IT05112
Ron -- IB
IN
VCE=10V
f=1MHz
1kΩ
1kΩ
IB
Gain-Bandwidth Product, fT -- MHz
OUT
7
5
3
2
100
1.0
ON Resistance, Ron --
Ω
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05113
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
700
PC -- Ta
Base Current, IB -- mA
10
IT06092
7
Collector Dissipation, PC -- mW
600
M
500
ou
nt
ed
on
ac
400
er
am
ic
bo
300
ar
d(
60
0m
200
m
2
!
0.
8m
m
100
0
0
20
40
60
80
100
120
)
140
160
Ambient Temperature, Ta --
°C
IT05116
No.7516-3/4
50C02MH
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2003. Specifications and information herein are subject
to change without notice.
PS No.7516-4/4
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