TCST1230
www.vishay.com
Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor Output
FEATURES
Top view
A
E
• Package type: leaded
• Detector type: phototransistor
• Dimensions (L x W x H in mm): 9.2 x 4.8 x 5.4
• Gap (in mm): 2.8
• Aperture (in mm): 0.5
• Typical output current under test: I
C
= 2 mA
• Daylight blocking filter
• Emitter wavelength: 950 nm
C
21833
C
19205_1
DESCRIPTION
The TCST1230 is a transmissive sensor that includes an
infrared emitter and phototransistor, located face-to-face on
the optical axes in a leaded package which blocks visible
light.
• Lead (Pb)-free soldering released
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Optical switch
• Shaft encoder
• Detection of opaque material such as paper
• Detection of magnetic tapes
PRODUCT SUMMARY
PART NUMBER
TCST1230
GAP WIDTH
(mm)
2.8
APERTURE WIDTH
(mm)
0.5
TYPICAL OUTPUT
CURRENT UNDER TEST
(1)
(mA)
2
DAYLIGHT
BLOCKING FILTER
INTEGRATED
Yes
Note
• Conditions like in table basic characteristics/coupler
ORDERING INFORMATION
ORDERING CODE
TCST1230
Note
• MOQ: minimum order quantity
PACKAGING
Tube
VOLUME
(1)
MOQ: 4800 pcs, 60 pcs/tube
REMARKS
-
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
INPUT (EMITTER)
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
t
p
≤
10 μs
T
amb
≤
25 °C
V
R
I
F
I
FSM
P
V
T
j
6
60
3
100
100
V
mA
A
mW
°C
Distance to package 1.6 mm, t
≤
5 s
T
amb
≤
25 °C
P
tot
T
amb
T
stg
T
sd
250
- 25 to + 85
- 40 to + 100
260
mW
°C
°C
°C
TEST CONDITION
SYMBOL
VALUE
UNIT
Rev. 2.0, 21-Sep-12
Document Number: 83765
1
For technical questions, contact:
sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCST1230
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
T
amb
≤
25 °C
P
V
T
j
VALUE
70
7
100
150
100
UNIT
V
V
mA
mW
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
ABSOLUTE MAXIMUM RATINGS
400
P - Power Dissipation (mW)
300
Coupled device
200
Phototransistor
100
IR-diode
0
0
95 11088
30
60
90
120
150
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
COUPLER
Collector current
Collector emitter saturation
voltage
INPUT (EMITTER)
Forward voltage
Junction capacitance
OUTPUT (DETECTOR)
Collector emitter voltage
Emitter collector voltage
Collector dark current
SWITCHING CHARACTERISTICS
Turn-on time
Turn-off time
I
C
= 1 mA, V
CE
= 5 V,
R
L
= 100
Ω
(see figure 2)
I
C
= 1 mA, V
CE
= 5 V,
R
L
= 100
Ω
(see figure 2)
t
on
t
off
15
10
μs
μs
I
C
= 1 mA
I
E
= 10 μA
V
CE
= 25 V, I
F
= 0 A, E = 0 lx
V
CEO
V
ECO
I
CEO
70
7
10
100
V
V
nA
I
F
= 60 mA
V
R
= 0 V, f = 1 MHz
V
F
C
j
1.25
50
1.5
V
pF
V
CE
= 10 V, I
F
= 20 mA
I
F
= 20 mA, I
C
= 0.2 mA
I
C
V
CEsat
0.5
14
0.4
mA
V
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Rev. 2.0, 21-Sep-12
Document Number: 83765
2
For technical questions, contact:
sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCST1230
www.vishay.com
Vishay Semiconductors
I
F
0
I
F
I
F
+5V
I
C
= 1 mA; adjusted by I
F
0
I
C
100 %
90 %
t
p
t
R
G
= 50
Ω
t
p
= 0.01
T
t
p
= 50 µs
Channel I
Channel II
50
Ω
20223
Oscilloscope
R
L
≥
1 MΩ
C
L
≤
20 pF
10 %
0
t
r
t
d
t
on
t
p
t
d
t
r
t
on
(= t
d
+ t
r
)
Pulse duration
Delay time
Rise time
Turn-on time
t
s
t
f
t
off
t
s
t
f
t
off
(= t
s
+ t
f
)
Storage time
Fall time
Turn-off time
96 11698
t
100
Ω
Fig. 2 - Test Circuit for t
on
and t
off
Fig. 3 - Switching Times
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
10 000
I
CEO
- Collector Dark Current (nA)
V
CE
= 25 V
I
F
= 0 A
I
F
- Forward Current (mA)
100
1000
10
100
1
10
0.1
0
96 11862
1
0.4
0.8
1.2
1.6
2.0
95 11090
0
V
F
- Forward Voltage (V)
25
50
75
T
amb
- Ambient Temperature (°C)
100
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 6 - Collector Dark Current vs. Ambient Temperature
CTR
rel
- Relative Current Transfer Ratio
2.0
I
C
- Collector Current (mA)
V
CE
= 5 V
I
F
= 20 mA
1.5
10
V
CE
= 10 V
1
1.0
0.1
0.5
0.01
0
- 25
0
25
50
75
100
0.001
0.1
95 11083
1
10
100
95 11089
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
Fig. 5 - Relative Current Transfer Ratio vs. Ambient Temperature
Fig. 7 - Collector Current vs. Forward Current
Rev. 2.0, 21-Sep-12
Document Number: 83765
3
For technical questions, contact:
sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCST1230
www.vishay.com
Vishay Semiconductors
10
I
Crel
- Relative Collector Current
I
C
- Collector Current (mA)
110
100
90
80
70
60
50
40
30
20
10
0
- 0.5 - 0.4 - 0.3 - 0.2 - 0.1 0
96 12006
0
A = 0.5 mm
I
F
= 50 mA
1
20 mA
s
10 mA
0.1
5 mA
2 mA
0.01
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5
95 11084
V
CE
- Collector Emitter Voltage (V)
s - Displacement (mm)
Fig. 8 - Collector Current vs. Collector Emitter Voltage
Fig. 11 - Relative Collector Current vs. Displacement
100
CTR - Current Transfer Ratio (%)
V
CE
= 5 V
10
1
0.1
0.1
95 11085
0
10
100
I
F
- Forward Current (mA)
Fig. 9 - Current Transfer Ratio vs. Forward Current
20
t
on
/ t
off
- Turn on/Turn off Time (µs)
Non saturated
operation
V
S
= 5 V
R
L
= 100
Ω
15
10
t
on
5
t
off
0
0
2
4
6
8
10
I
C
- Collector Current (mA)
95 11086
Fig. 10 - Turn-on/Turn-off Time vs. Collector Current
Rev. 2.0, 21-Sep-12
Document Number: 83765
4
For technical questions, contact:
sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TCST1230
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
Vishay Semiconductors
96 12083
TUBE DIMENSIONS
in millimeters
20256
Rev. 2.0, 21-Sep-12
Document Number: 83765
5
For technical questions, contact:
sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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