Ordering number : ENA0442
SBT100-16JS
SANYO Semiconductors
DATA SHEET
SBT100-16JS
Applications
•
Schottky Barrier Diode (Twin Type · Cathode Common)
160V, 10A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
•
•
Tj=150°C.
Low forward voltage (VF max=0.88V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz resistive load, Sine wave Tc=78°C
50Hz sine wave, 1 cycle
Conditions
Ratings
160
165
10
100
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
Symbol
VR
VF
IR
C
Rth(j-c)
Conditions
IR=2mA, Tj=25°C*
IF=5A, Tj=25°C*
VR=160V, Tj=25°C*
VR=10V, Tj=25°C*
Junction-Case : Smoothed DC
Ratings
min
160
0.82
20
100
4.0
0.88
200
typ
max
Unit
V
V
µA
pF
°C
/ W
Note)
*
: Value per element
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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SBT100-16JS
170
Tc -- IO
Interterminal Capacitance, C -- pF
(1)Rectangular wave
θ
=60°
(2)Rectangular wave
θ
=120°
(3)Rectangular wave
θ
=180°
(4)Sine wave
θ
=180°
Rectangular
wave
θ
5
C -- VR
f=100kHz
150
3
2
Case Temperature, Tc --
°C
130
100
360°
100
7
5
90
70
Sine
wave
360°
4
6
(1)
(2) (4)
(3)
50
30
0
180°
2
3
2
1.0
8
10
12
14
IT10966
2
3
5
7
10
2
3
5
Average Output Current, IO -- A
120
Transient Thermal Resistance, Rth(j-c) --
°C
/ W
IFSM -- t
I
S
Reverse Voltage, VR -- V
10
7
5
100
IT10967
7
Rth(j-c) -- t
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
100
80
20ms
t
3
2
60
1.0
7
5
40
20
3
2
0.001 2 3
5 70.01 2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10 2
ID01058
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID01041
Time, t -- s
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
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This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0442-3/3