Ordering number : ENA1379
SBE818
SANYO Semiconductors
DATA SHEET
SBE818
Applications
•
Low IR Schottky Barrier Diode
30V, 2.0A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
•
Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting.
Small switching noise.
Low forward voltage (IF=2.0A, VF max=0.62V).
Low reverse current (VR=15V, IR max=7.5
μ
A).
Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm).
Specifications
Absolute Maximum Ratings
at Ta=25°C
(Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
Conditions
Ratings
30
30
When mounted on ceramic substrate, Rectangular wave 180°C
When mounted on glass epoxy substrate
50Hz sine wave, 1 cycle
2.0
1.5
20
--55 to +125
--55 to +125
Unit
V
V
A
A
A
°C
°C
V
RSM
I
O
I
FSM
Tj
Tstg
Marking : SC
*: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8),
and between Terminal 3 and Terminal 5 (or 6).
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
D0308SB MS IM TC-00001737 No. A1379-1/4
SBE818
Electrical Characteristics
at Ta=25°C (Value per element)
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF1
VF2
VF3
IR
C
trr
Rth(j-a)1
Rth(j-a)2
IR=1mA
IF=1.0A
IF=1.5A
IF=2.0A
VR=15V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted in Cu-foiled area of
0.96mm
2
×0.03mm
on glass epoxy substrate
When mounted on ceramic substrate (900mm
2
×0.8mm)
Conditions
Ratings
min
30
0.48
0.53
0.57
30
10
100
65
0.53
0.58
0.62
7.5
typ
max
Unit
V
V
V
V
μA
pF
ns
°C / W
°C / W
Package Dimensions
unit : mm (typ)
7045-004
Electrical Connection
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
Top view
8
0.2
0.2
8
5
0.125
7
6
5
1.7
2.1
1
2
3
4
1
0.5
2.0
4
0.2
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
SANYO : EMH8
trr Test Circuit
Duty
≤
10%
100mA 100mA
10mA
50Ω
10μs
0.05
0.75
*: Terminal 4 is used for the purposes such as
test. Although it is connected to Anode 2,
please handle it as NC Terminal
100Ω
10Ω
--5V
trr
No. A1379-2/4
SBE818
3
2
1E+00
7
5
3
2
IF -- VF
1E+04
1E+03
IR -- VR
Ta=125
°
C
100
°
C
75
°
C
Forward Current, IF --
μA
Reverse Current, IR --
μA
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
50
°
C
3
2
Ta
=1
100
25
°
C
°
C
75
°
C
50
°
C
25
°
C
0
°
C
--25
°
C
1E-01
7
5
25
°
C
0
°
C
1E-02
7
5
3
2
--25
°
C
1E-03
0
0.1
0.2
0.3
0.4
0.5
0.6
IT14256
1E-04
0
5
10
15
20
25
30
IT14257
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
1.5
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
(5)DC
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
(1)
Reverse Voltage, VR -- V
5.0E--05
4.5E--05
4.0E--05
3.5E--05
3.0E--05
2.5E--05
2.0E--05
1.5E--05
1.0E--05
VR
PR(AV) -- VR
(4)
(2)
(3)
(5)
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
VR
360°
θ
(1)
(2)
Rectangular
wave
θ
360°
(3)
180°
360°
Sine
wave
(4)
Sine
wave
180°
360°
2.0
2.5
IT14258
5.0E--06
0.0E+00
0
5
10
15
20
25
30
35
IT14259
Average Output Current, IO -- A
150
Ta -- IO
Average Reverse Voltage, VR -- V
150
Ambient Temperature, Ta --
°
C
100
Ambient Temperature, Ta --
°
C
125
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
(5)DC
Ta -- IO
125
100
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
(5)DC
Rectangular
wave
75
θ
50
360°
75
Rectangular
wave
θ
360°
50
25
Sine
wave
180°
360°
0.2
0.4
0.6
0.8
(3)
(1)
1.0
1.2
Sine
wave
180°
(2)
1.4
(4)
1.6
(5)
1.8
2.0
25
(1)
0.5
1.0
0
0
0
360°
0
(2)
(4)
1.5
(3) (5)
2.0
2.5
IT14261
Average Output Current, IO -- A
5
3
2
IT14260
24
C -- VR
Average Output Current, IO -- A
IFSM -- t
IS
Surge Forward Current, IFSM(Peak) -- A
f=1MHz
Interterminal Capacitance, C -- pF
Current waveform 50Hz sine wave
20
16
20ms
t
100
7
5
3
2
12
8
4
10
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Reverse Voltage, VR -- V
IT13217
Time, t -- s
IT13214
No. A1379-3/4
SBE818
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of December, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1379-4/4
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