STGW35HF60WD
35 A, 600 V ultra fast IGBT
Features
■
■
■
■
■
Improved E
off
at elevated temperature
Minimal tail current
Low conduction losses
V
CE(sat)
classified for easy parallel connection
Ultra fast soft recovery antiparallel diode
2
1
3
Applications
■
■
■
Welding
High frequency converters
Power factor correction
Figure 1.
TO-247
Description
The STGW35HF60WD is based on a new
advanced planar technology concept to yield an
IGBT with more stable switching performance
(E
off
) versus temperature, as well as lower
conduction losses. The device is tailored to high
switching frequency operation (over 100 kHz).
Internal schematic diagram
Table 1.
Device summary
Marking
(1)
GW35HF60WDA
Package
Packaging
Order code
STGW35HF60WD
GW35HF60WDB
GW35HF60WDC
TO-247
Tube
1. Collector-emitter saturation voltage is classified in group A, B and C, see
Table 5: VCE(sat) classification.
STMicroelectronics reserves the right to ship from any group according to production availability.
May 2010
Doc ID 15592 Rev 5
1/12
www.st.com
12
Electrical ratings
STGW35HF60WD
1
Electrical ratings
Table 2.
Symbol
V
CES
I
C (1)
I
C (1)
I
CP(2)
I
CL (3)
V
GE
I
F
I
FSM
P
TOT
T
stg
T
j
1.
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t
p
= 10 ms sinusoidal
Total dissipation at T
C
= 25 °C
Storage temperature
– 55 to 150
Operating junction temperature
°C
Value
600
60
35
150
80
± 20
30
120
200
Unit
V
A
A
A
A
V
A
A
W
Calculated according to the iterative formula:
T
j
(
max
)
–
T
C
I
C
(
T
C
)
= -------------------------------------------------------------------------------------------------------
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
2.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
3. V
CLAMP
= 80% (V
CES
), V
GE
= 15 V, R
G
= 10
Ω,
T
J
= 150 °C
Table 3.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.63
1.5
50
Unit
°C/W
°C/W
°C/W
2/12
Doc ID 15592 Rev 5
STGW35HF60WD
Electrical characteristics
2
Electrical characteristics
(T
J
= 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
Collector-emitter
breakdown voltage
(V
GE
= 0)
Collector-emitter
saturation voltage
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Test conditions
Min. Typ. Max. Unit
V
(BR)CES
I
C
= 1 mA
V
GE
= 15 V, I
C
= 20 A
V
GE
= 15V, I
C
= 20 A,
T
J
= 125 °C
V
CE
= V
GE
, I
C
= 1 mA
V
CE
= 600 V
V
CE
= 600 V,
T
J
= 125 °C
V
GE
= ±20 V
600
2.5
V
V
CE(sat)
V
GE(th)
I
CES
I
GES
V
1.65
3.75
5.75
250
1
± 100
V
µA
mA
nA
Table 5.
Symbol
V
CE(sat)
classification
Value
Parameter
Group
Min.
A
1.68
1.88
2.13
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 20 A
Max.
1.92
2.17
2.50
V
Unit
V
CE(sat)
B
C
Table 6.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min.
Typ. Max. Unit
2400
235
50
140
13
52
pF
pF
pF
nC
nC
nC
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
= 400 V, I
C
= 20 A,
V
GE
= 15 V,
(see
Figure 17)
-
-
-
-
Doc ID 15592 Rev 5
3/12
Electrical characteristics
STGW35HF60WD
Table 7.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 400 V, I
C
= 20 A
R
G
= 10
Ω,
V
GE
= 15 V,
(see
Figure 16)
V
CC
= 400 V, I
C
= 20 A
R
G
= 10
Ω,
V
GE
= 15 V,
T
J
= 125 °C
(see
Figure 16)
V
CC
= 400 V, I
C
= 20 A,
R
GE
= 10
Ω,
V
GE
= 15 V
(see
Figure 16)
V
CC
= 400 V, I
C
= 20 A,
R
GE
= 10
Ω,
V
GE
=15 V,
T
J
= 125 °C
(see
Figure 16)
Min.
Typ.
30
15
1650
30
15
1600
30
175
40
50
225
70
Max.
Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
-
-
Table 8.
Symbol
E
on(1)
E
off
E
ts
E
on(1)
E
off
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 400 V, I
C
= 20 A
R
G
= 10
Ω,
V
GE
= 15 V,
(see
Figure 18)
V
CC
= 400 V, I
C
= 20 A
R
G
= 10
Ω,
V
GE
= 15 V,
T
J
= 125 °C
(see
Figure 18)
Min.
Typ.
290
185
475
420
350
770
530
Max.
Unit
µJ
µJ
µJ
µJ
µJ
µJ
-
-
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
Figure 18.
If the IGBT is offered
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.
Table 9.
Symbol
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
F
= 20 A
I
F
= 20 A,
T
J
= 125 °C
I
F
= 20 A,V
R
= 50 V,
di/dt = 100 A/µs
(see
Figure 19)
I
F
= 20 A,V
R
= 50 V,
T
J
=125 °C, di/dt = 100 A/µs
(see
Figure 19)
Min.
-
Typ.
1.8
1.4
50
90
3
135
375
5.5
Max.
2.25
Unit
V
V
ns
nC
A
ns
nC
A
-
-
-
-
4/12
Doc ID 15592 Rev 5
STGW35HF60WD
Electrical characteristics
2.1
Figure 2.
I
C
200
(A)
Electrical characteristics (curves)
Output characteristics
V
GE
= 15 V
11 V
Figure 3.
200
I
C
(A)
Transfer characteristics
10 V
V
CE
= 10 V
150
150
9V
100
8V
50
100
7V
V
GE
= 6 V
50
0
0
2
4
6
8
V
CE
(V)
10
0
0
3
6
9
V
GE
(V)
12
Figure 4.
1.6
V
CE(sat)
(norm)
1.4
1.2
1
0.8
0.6
0.4
0
Normalized V
CE(sat)
vs. I
C
Figure 5.
1.6
V
CE(sat)
(norm)
Normalized V
CE(sat)
vs. temperature
V
GE
= 15 V
I
C
= 80 A
I
C
= 60 A
T
J
= -50 ºC
T
J
= 25 ºC
1.4
1.2
T
J
= 150 ºC
1
10 A
I
C
= 40 A
30 A
I
C
= 5 A
20 A
V
GE
= 15 V
0.8
20
40
60
80
I
C
(A)
0.6
-50
0
50
100
T
J
(°C)
150
Figure 6.
1.1
V
CES
(norm)
1.05
Normalized breakdown voltage vs. Figure 7.
temperature
1.2
V
GE(th)
(norm)
1.1
1
Normalized gate threshold voltage
vs. temperature
1
0.9
0.8
V
GE
= V
CE
0.7
I
C
= 250 µA
I
C
= 1 mA
0.95
0.9
-50
0
50
100
T
J
150
(°C)
0.6
-50
0
50
100
T
J
150
(°C)
Doc ID 15592 Rev 5
5/12
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