The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier
featuring one-micron emitters with FT up to 50GHz. This device has an
internal temperature compensation circuit permitting operation directly
from supply voltages as low as 2.5V. The SGL0163Z has been character-
ized at V
D
=3V for low power and 4V for medium power applications. Only
two DC-blocking capacitors, a bias resistor, and an optional RF choke are
required for operation from 800MHz to 1300MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Temperature
Compensation
Circuit
Features
V
S
RF Out / V
S
Internally Matched to 50
800MHz to 1300MHz
High Input/Output Intercept
Low Noise Figure: 1.2dB Typ.
at 900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
Receivers, GPS, RFID
Cellular, Fixed Wireless, Land
Mobile
Applications
RF In
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Parameter
Small Signal Gain
Specification (V
S
=3V)
Min.
Typ.
Max.
14.0
15.7
15.5
14.1
4.4
5.2
5.6
17.0
Specification (V
S
=4V)
Min.
Typ.
Max.
16.6
15.8
15.0
9.9
10.1
10.5
Unit
dB
dB
dB
dBm
dBm
dBm
Condition
800MHz
900MHz
1000MHz
800MHz
900MHz
1000MHz
Tone Spacing=1MHz
P
OUT
per tone=-13dBm
800MHz
900MHz
1000MHz
800MHz, Z
S
=50
900MHz, Z
S
=50
1000MHz, Z
S
=50
900MHz
900MHz
900MHz
Output Power at 1dB Compres-
sion
3.2
Input Third Order Intercept
Point
5.0
Noise Figure
5.3
7.0
9.0
1.1
1.2
1.2
1.7
12.1
13.4
14.8
1.6
1.7
1.7
15.7
17.6
20.9
23
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
Input Return Loss
10.0
12.5
Output Return Loss
11.5
15.6
Reverse Isolation
20.9
Device Current
9.5
12.0
14.0
Thermal Resistance
255
Test Conditions: 800MHz to 1300 Application Circuit, T
LEAD
=25°C, Z
0
=Z
L
=50
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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