GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
temperature coefficient
• Square RBSOA
• 3 μs short circuit capability
• FRED Pt
®
antiparallel diodes with ultrasoft reverse
recovery
SOT-227
with
positive
• T
J
maximum = 175 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
600 V
100 A at 117 °C
1.72 V
100 A at 25 °C
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
typical at 100 A, 25 °C
I
F
DC
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Speed 4 kHz to 30 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
Power dissipation, IGBT
SYMBOL
V
CES
I
C (1)
I
CM
I
LM
I
F
I
FSM
V
GE
P
D
P
D
V
ISOL
T
C
= 25 °C
T
C
= 117 °C
T
C
= 25 °C
T
C
= 117 °C
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
184
137
350
350
100
71
200
± 20
577
223
205
79
2500
V
W
V
A
UNITS
V
Power dissipation, diode
Isolation voltage
Note
(1)
Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
SYMBOL
V
BR(CES)
V
CE(on)
V
GE(th)
V
GE(th)
/T
J
I
CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 15 V, I
C
= 100 A
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
I
F
= 40 A, V
GE
= 0 V
I
F
= 40 A, V
GE
= 0 V, T
J
= 125 °C
V
GE
= ± 20 V
MIN.
600
-
-
3.5
-
-
-
-
-
-
TYP.
-
1.72
2.0
4.6
- 16.8
0.6
0.15
1.78
1.39
-
MAX.
-
2.0
V
2.2
6.5
-
100
3
2.21
V
1.74
± 200
nA
mV/°C
μA
mA
UNITS
Forward voltage drop
Gate to emitter leakage current
V
FM
I
GES
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Short circuit safe operating area
SYMBOL
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
SCSOA
T
J
= 175 °C, R
g
= 22
,
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
p
= 600 V
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
T
J
= 175 °C, I
C
= 350 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V, L = 500 μH
-
-
-
-
-
-
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
TEST CONDITIONS
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
0.35
2.08
2.43
0.41
2.83
3.24
162
55
150
129
Fullsquare
61
4
120
133
12
750
3
85
7
297
154
15
1150
ns
A
nC
ns
A
nC
μs
MAX.
-
-
-
mJ
-
-
-
-
-
ns
-
-
UNITS
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
IGBT
Junction to case
Diode
Case to sink per module
Mounting torque, 6-32 or M3 screw
Weight
R
thJC
R
thCS
SYMBOL
T
J
, T
Stg
MIN.
- 40
-
-
-
-
-
TYP.
-
-
-
0.05
-
30
MAX.
175
0.26
0.73
-
1.3
-
Nm
g
°C/W
UNITS
°C
Vishay Semiconductors
Allowable Case Temperature (°C)
180
160
140
120
300
275
250
225
200
175
150
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160 180 200
93185_02
T
J
= 125 °C
I
C
(A)
100
80
60
40
20
0
T
J
= 25 °C
T
J
= 175 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
93185_01
I
C
- Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
V
CE
(V)
Fig. 3 - Typical IGBT Collector Current Characteristics
V
GE
= 15 V
Allowable Case Temperature (°C)
1000
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
100
I
C
(A)
10
1
0.1
0.01
1
93185_02
10
100
1000
93185_04
V
CE
(V)
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 175 °C, V
GE
= 15 V
I
F
- Continuous Forward Current (A)
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
GT100DA60U
Vishay Semiconductors
200
175
150
125
100
75
50
25
0
0
93185_05
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
2.5
T
J
= 175 °C
2.0
100 A
T
J
= 125 °C
V
CE
(V)
I
F
(A)
1.5
T
J
= 25 °C
50 A
27 A
1.0
0.5
1.0
1.5
2.0
2.5
3.0
93185_08
20
60
100
140
180
V
FM
(V)
Fig. 5 - Typical Diode Forward Characteristics
T
J
(°C)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
10
1
0.1
T
J
= 175 °C
3.0
2.5
2.0
E
off
1.5
1.0
0.5
0
200
300
400
500
600
93185_09
10
30
50
70
90
110
T
J
= 125 °C
0.01
0.001
0.0001
0.00001
100
T
J
= 25 °C
Energy (mJ)
I
CES
(mA)
E
on
93185_06
V
CES
(V)
I
C
(A)
Fig. 9 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
,
V
GE
= 15 V
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5.0
T
J
= 25 °C
1000
t
f
Switching
Time (ns)
4.5
t
d(off)
100
t
d(on)
V
geth
(V)
4.0
3.5
3.0
T
J
= 125 °C
2.5
0.2
93185_07
t
r
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
93185_10
0
20
40
60
80
100
120
I
C
(mA)
Fig. 7 - Typical IGBT Threshold Voltage
I
C
(A)
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
,
V
GE
= 15 V
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93185
Revision: 22-Jul-10
GT100DA60U
Insulated Gate Bipolar Transistor
(Trench IGBT), 100 A
6
5
4
3
2
1
0
0
93185_11
10
20
30
40
50
E
on
190
170
150
Vishay Semiconductors
Energy (mJ)
t
rr
(ns)
E
off
130
110
90
70
50
30
100
93185_13
T
J
= 125 °C
T
J
= 25 °C
1000
R
g
(Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 100 A, L = 500 μH,
V
CC
= 360 V, V
GE
= 15 V
dI
F
/dt (A/μs)
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 50 A
1000
t
d(on)
30
25
Switching
Time (ns)
t
d(off)
20
T
J
= 125 °C
100
t
f
t
r
I
rr
(A)
15
10
5
T
J
= 25 °C
10
0
93185_12
10
20
30
40
50
93185_14
0
100
1000
R
g
(Ω)
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
I
C
= 100 A, V
GE
= 15 V
1400
1200
1000
T
J
= 125 °C
dI
F
/dt (A/μs)
Fig. 14 - Typical I
rr
Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 50 A
Q
rr
(nC)
800
600
400
T
J
= 25 °C
200
0
100
1000
93185_15
dI
F
/dt (A/μs)
Fig. 15 - Typical Q
rr
Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 50 A
Document Number: 93185
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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