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SIHLZ14STR-E3: 产品描述Power MOSFET; 产品类别分立半导体晶体管; 文件大小353KB，共10页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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SIHLZ14STR-E3概述

Power MOSFET

SIHLZ14STR-E3规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Vishay(威世)
零件包装代码	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	4
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	68 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	10 A
最大漏极电流 (ID)	10 A
最大漏源导通电阻	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	43 W
最大脉冲漏极电流 (IDM)	40 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 5 V

8.4

3.5

6.0

Single

FEATURES

0.20

•

Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRLZ14S, SiHLZ14S)

• Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)

• 175 °C Operating Temperature

• Fast Switching

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient reliable device for use in a wide

variety of applications.

The D

PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance

in any existing surface mount package. The D

PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

The through-hole version (IRLZ44L, SiHLZ44L) is available

for low-profile applications.

DESCRIPTION

PAK

(TO-262)

PAK (TO-263)

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHLZ14S-GE3

IRLZ14SPbF

SiHLZ14S-E3

PAK (TO-263)

SiHLZ14STRL-GE3

PAK (TO-263)

SiHLZ14STRR-GE3

IRLZ14STRRPbF

SiHLZ14STR-E3

PAK (TO-262)

IRLZ14LPbF

SiHLZ14L-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

b, e

Maximum Power Dissipation

Peak Diode Recovery dV/dt

c, e

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

= 25 °C

Current

a, e

at 5 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

for 10 s

LIMIT

± 10

7.2

0.29

3.7

4.5

- 55 to + 175

300

UNIT

W/°C

V/ns

°C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= 25 V, starting T

= 25 °C, L = 790 μH, R

= 25

,

= 10 A (see fig. 12).

c. I



10 A, dI/dt



90 A/μs, V



, T



175 °C.

d. 1.6 mm from case.

e. Uses IRLZ14, SiHLZ14 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90414

S11-1044-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHLZ14STR-E3相似产品对比

	SIHLZ14STR-E3	SIHLZ14L-E3	SIHLZ14STRL-GE3	SIHLZ14STRR-GE3	SIHLZ14L	SIHLZ14S-E3	IRLZ14LPBF	IRLZ14S_11
描述	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET
是否无铅	不含铅	-	不含铅	不含铅	含铅	不含铅	不含铅	-
是否Rohs认证	符合	-	符合	符合	不符合	符合	-	-
厂商名称	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	-	-
零件包装代码	D2PAK	-	D2PAK	D2PAK	TO-262AA	D2PAK	TO-262AA	-
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	-
针数	4	-	4	4	3	4	3	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown	-
ECCN代码	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	-
其他特性	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	-	-
雪崩能效等级（Eas）	68 mJ	68 mJ	68 mJ	68 mJ	68 mJ	68 mJ	68 mJ	-
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V	-
最大漏极电流 (Abs) (ID)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	-
最大漏极电流 (ID)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	-
最大漏源导通电阻	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	-
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
JEDEC-95代码	TO-263AB	TO-262AA	TO-263AB	TO-263AB	TO-262AA	TO-263AB	TO-262AA	-
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	-
元件数量	1	1	1	1	1	1	1	-
端子数量	2	3	2	2	3	2	3	-
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	-
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
封装形式	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	-
峰值回流温度（摄氏度）	260	-	260	260	240	260	NOT SPECIFIED	-
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	-
最大功率耗散 (Abs)	43 W	43 W	43 W	43 W	43 W	43 W	43 W	-
最大脉冲漏极电流 (IDM)	40 A	40 A	40 A	40 A	40 A	40 A	40 A	-
认证状态	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
表面贴装	YES	NO	YES	YES	NO	YES	NO	-
端子形式	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	-
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
处于峰值回流温度下的最长时间	40	-	40	40	30	40	NOT SPECIFIED	-
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	-

SIHLZ14STR-E3

SIHLZ14STR-E3概述

SIHLZ14STR-E3规格参数

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