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SIHFZ14S-GE3: 产品描述Power MOSFET; 产品类别分立半导体晶体管; 文件大小339KB，共10页; 制造商Vishay(威世); 官网地址http://www.vishay.com; 标准

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SIHFZ14S-GE3概述

Power MOSFET

SIHFZ14S-GE3规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	Vishay(威世)
零件包装代码	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2
针数	4
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）	47 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (Abs) (ID)	10 A
最大漏极电流 (ID)	10 A
最大漏源导通电阻	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	43 W
最大脉冲漏极电流 (IDM)	40 A
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= 10 V

3.1

5.8

Single

FEATURES

0.20

•

Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount (IRFZ14S, SiHFZ14S)

• Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

• 175 °C Operating Temperature

• Fast Switching

• Compliant to RoHS Directive 2002/95/EC

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extermely low

on resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extermely efficient reliabel deviece for use in a wide

variety of applications.

The D

PAK is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and lowest possible on-resistance

in any existing surface mount package. The D

PAK is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

The through-hole version (IRFZ14L, SiHFZ44L) is available

for low profile applications.

PAK (TO-263)

SiHFZ14STRL-GE3

IRFZ14STRLPbF

SiHFZ14STL-E3

PAK (TO-262)

SiHFZ14L-GE3

IRFZ14LPbF

SiHFZ14L-E3

DESCRIPTION

PAK

(TO-262)

PAK (TO-263)

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

PAK (TO-263)

SiHFZ14S-GE3

IRFZ14SPbF

SiHFZ14S-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain

Linear Derating Factor

Single Pulse Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Current

at 10 V

= 25 °C

= 100 °C

SYMBOL

= 25 °C

dV/dt

, T

stg

for 10 s

LIMIT

± 20

7.2

0.29

3.7

4.5

- 55 to + 175

300

UNIT

W/°C

V/ns

°C

Notes

b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

c. V

= 25 V, starting T

= 25 °C, L = 548 μH, R

= 25

,

= 10 A (see fig. 12).

d. I



10 A, dI/dt



90 A/μs, V



, T



175 °C.

e. 1.6 mm from case.

f. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90365

S11-1063-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

SIHFZ14S-GE3相似产品对比

	SIHFZ14S-GE3	IRFZ14LPBF	SIHFZ14L-E3	SIHFZ14L-GE3	SIHFZ14S	SIHFZ14S-E3	SIHFZ14STL-E3	SIHFZ14STRL-GE3
描述	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET
是否无铅	不含铅	不含铅	不含铅	不含铅	含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	不符合	符合	符合	符合
零件包装代码	D2PAK	TO-262AA	TO-262AA	TO-262AA	D2PAK	D2PAK	D2PAK	D2PAK
包装说明	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
针数	4	3	3	3	4	4	4	4
Reach Compliance Code	unknow	unknown	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE	HIGH RELIABILITY, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）	47 mJ	47 mJ	47 mJ	47 mJ	47 mJ	47 mJ	47 mJ	47 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V
最大漏极电流 (Abs) (ID)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
最大漏极电流 (ID)	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
最大漏源导通电阻	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-263AB	TO-262AA	TO-262AA	TO-262AA	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 代码	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1	1	1
端子数量	2	3	3	3	2	2	2	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	260	260	260	240	260	260	260
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	43 W	43 W	43 W	43 W	43 W	43 W	43 W	43 W
最大脉冲漏极电流 (IDM)	40 A	40 A	40 A	40 A	40 A	40 A	40 A	40 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	NO	NO	NO	YES	YES	YES	YES
端子形式	GULL WING	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	40	40	40	30	40	40	40
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Vishay(威世)	-	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)	Vishay(威世)
外壳连接	DRAIN	-	-	-	DRAIN	DRAIN	DRAIN	DRAIN
JESD-609代码	-	e3	e3	-	e0	e3	e3	-
端子面层	-	Matte Tin (Sn)	Matte Tin (Sn)	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	-

SIHFZ14S-GE3

SIHFZ14S-GE3概述

SIHFZ14S-GE3规格参数

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