INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter
Voltage-
: V
CEO(SUS)
= 800V(Min)
·Fast
Turn-Off Time
APPLICATIONS
Designed for high-voltage, high-speed , power switching in
inductive circuits where fall time is critical. They are particu-
larly suited for line operated switchmode applications as:
·Switching
Regulators
·Inverters
·Solenoids
·Relay
Drivers
·Motor
Controls
·Deflection
Circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CEV
V
CEO(SUS)
V
EBO
I
C
I
CM
I
B
B
MJH16018
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Collector Power Dissipation
@T
C
=100℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
6
10
15
8
12
150
UNIT
V
V
V
A
A
A
A
I
BM
P
C
W
50
150
-55~150
℃
℃
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
(th)j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)
I
CEV
I
CER
I
EBO
h
FE
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 50mA; I
B
= 0
I
C
= 5A ;I
B
= 1A
I
C
= 5A ;I
B
= 1A ;T
C
=100℃
I
C
= 10A ;I
B
= 4A
I
C
= 5A ;I
B
= 1A
I
C
= 5A ;I
B
= 1A ;T
C
=100℃
V
CEV
=1500V,V
BE(off)
=1.5V
V
CEV
=1500V,V
BE(off)
=1.5V;T
C
=100℃
V
CE
=1500V;R
BE
=50Ω;T
C
=100℃
V
EB
= 6V; I
C
= 0
I
C
= 5A ; V
CE
= 5V
I
E
= 0; f= 1kHz ; V
CB
= 10V
7
MIN
800
MJH16018
TYP.
MAX
UNIT
V
1.5
2.0
1.5
1.5
1.5
0.25
1.5
2.5
1.0
V
V
V
mA
mA
mA
400
pF
Switching times; Resistive load
t
d
t
r
t
s
t
f
Delay Time
Rise Time
Storage Time
Fall Time
I
C
=5A; I
B1
= 1A;I
B2
= -2A;
V
CC
= 250V ,R
B2
= 3Ω;
PW=30μs
Duty Cycle≤2%
0.05
0.3
2
0.9
0.1
0.4
3
1.2
μs
μs
μs
μs
isc Website：www.iscsemi.cn
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