INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage—
: V
CEO(SUS)
= 60V
·DC
Current Gain—
: h
FE
= 30(Min) @ I
C
= 0.5 A
= 12(Min) @ I
C
= 1.5 A
·Complement
to Type MJE171
APPLICATIONS
·Low
power audio amplifier
·Low
current high speed switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
MJE181
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak
Base Current
Collector Power Dissipation
T
a
=25℃
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
80
60
7
3
6
1
1.5
UNIT
V
V
V
A
A
A
P
C
W
12.5
150
-65~150
℃
℃
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
10
83.4
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
V
BE
(on)
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
Collector Capacitance
CONDITIONS
I
C
= 10mA; I
B
= 0
I
C
= 0.5 A ;I
B
= 50mA
I
C
= 1.5A ;I
B
= 0.15 A
B
MJE181
MIN
60
MAX
UNIT
V
0.3
0.9
1.7
1.5
2.0
1.2
0.1
0.1
0.1
50
30
12
50
40
250
V
V
V
V
V
V
μA
mA
μA
I
C
= 3A ;I
B
= 0.6 A
I
C
= 1.5A; I
B
= 0.15A
I
C
= 3A; I
B
= 0.6A
B
V
CE
= 1V
;
I
C
= 0.5A
V
CB
= 80V
;
I
E
= 0
V
CB
= 80V
;
I
E
= 0;T
C
= 150℃
V
EB
= 7V; I
C
= 0
I
C
= 0.1 A ; V
CE
= 1V
I
C
= 0.5A ; V
CE
= 1V
I
C
= 1.5 A ; V
CE
= 1V
I
C
= 0.1 A; V
CE
= 10V;
I
E
= 0; V
CB
= 10V; f
test
= 0.1MHz
MHz
pF
isc Website：www.iscsemi.cn
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