INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 400V(Min)- MJE13070
= 450V(Min)- MJE13071
·
Collector-Emitter Saturation Voltage-
: V
CE(sat)
= 3.0V(Min)@I
C
= 5A
APPLICATIONS
·Designed
for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.They are partic-
ularly suited for line-operated switchmode applications su-
ch as switching regulators , inverters , DC-DC converter,
motor controls, solenoid drive and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
MJE13070
MJE13071
MJE13070
MJE13071
VALUE
650
V
750
400
V
450
6
5
8
2
80
150
-65~150
V
A
A
A
W
℃
℃
UNIT
MJE13070/13071
V
CEV
Collector-Emitter
Voltage
V
CEO
Collector-Emitter
Voltage
V
EBO
I
C
I
CM
I
B
B
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.56
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJE13070
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
MJE13071
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
sat
)
I
CEV
I
EBO
h
FE
C
OB
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Output Capacitance
I
C
= 3A; I
B
= 0.6A
I
C
= 3A; I
B
= 0.6A;T
C
=100℃
B
B
MJE13070/13071
CONDITIONS
MIN
400
MAX
UNIT
I
C
= 0.1A ;I
B
= 0
B
V
450
1.0
2.0
3.0
1.5
1.5
0.5
2.5
1.0
8
250
pF
V
V
V
mA
mA
I
C
= 5A; I
B
= 1A
B
I
C
= 3A; I
B
= 0.6A
I
C
= 3A; I
B
= 0.6A;T
C
=100℃
B
B
V
CEV
=Rated Value;V
BE(
off
)
= 1.5V
V
CEV
=Rated Value;V
BE(
off
)
=1.5V;T
C
=100℃
V
EB
= 6V; I
C
=0
I
C
= 3A ; V
CE
= 5V
I
E
= 0; V
CB
= 10V, f
test
= 1.0kHz
Switching Times
t
d
t
r
t
stg
t
f
Delay Time
Rise Time
Storage Time
Fall Time
0.05
0.4
1.5
0.5
μs
μs
μs
μs
I
C
= 3A; I
B1
= 0.4A;V
BE(
off
)
= 5V;
V
CC
= 250V; t
p
= 30μs,Duty Cycle≤1%
isc Website：www.iscsemi.cn
2
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