INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
MJ901
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
=-80V(Min.)
·High
DC Current Gain-
: h
FE
= 1000(Min.)@I
C
=-3A
·Low
Collector Saturation Voltage-
: V
CE (sat)
=-2.0V(Max.)@ I
C
=-3A
APPLICATIONS
·Designed
for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continunous
Base Current-Continunous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-80
-80
-5
-8
-0.1
90
200
-55~+200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.94
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MJ901
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
=-0.1A; I
B
= 0
-80
V
V
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
C
=-3A; I
B
=-12mA
-2.0
V
V
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
C
=-8A; I
B
=-40mA
-4.0
V
V
BE
(on)
Base-Emitter On Voltage
I
C
=-3A, V
CE
=-3V
V
CE
=-80V; R
BE
=1kΩ
V
CE
=-80V; R
BE
=1kΩ; T
C
=150℃
V
CE
=-40V; I
B
= 0
-2.5
-1.0
-5.0
-0.5
V
I
CER
Collector Cutoff Current
mA
I
CEO
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
V
EB
=-5V; I
C
= 0
-2.0
mA
h
FE-1
DC Current Gain
I
C
=-3A, V
CE
=-3V
1000
h
FE-2
DC Current Gain
I
C
=-4A, V
CE
=-3V
750
isc Website：www.iscsemi.cn
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