INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
MJ450
DESCRIPTION
·Low
Saturation Voltage-
: V
CE(sat)
=-1V@I
C
=-10Adc
·DC
Current Gain-
: h
FE
=20(Min)@ I
C
=-10A
APPLICATIONS
·Designed
for high-current switching and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-40
-40
-5
-30
-5
150
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MJ450
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
=-200mA ; I
B
= 0
-40
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
=-10A; I
B
=-1A
-1
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=-10A; I
B
=-1A
-1.5
V
I
CBO
Collector Cutoff Current
V
CE
=-40V; I
E
= 0
-1
mA
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-10
mA
h
FE
DC Current Gain
I
C
=-10A ; V
CE
=-2V
20
f
T
Current Gain-Bandwidth Product
I
C
= -1A ;V
CE
=-10V; f
test
=1MHz
2
isc Website：www.iscsemi.cn
2
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