INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlingtion Power Transistor
DESCRIPTION
·With
TO-3 package
·Respectively
complement to type MJ4035
·DARLINGTON
·High
DC current gain
APPLICATIONS
·For
use as output devices in complementary general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
MJ4032
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-100
-100
-5
-16
-0.5
150
200
-55~200
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MJ4032
MAX
UNIT
V
CEO
Collector-Emitter Breakdown Voltage
I
C
=-100mA; I
B
= 0
B
-100
V
V
CE
(sat)
-1
Collector-Emitter Saturation Voltage
I
C
=-10A; I
B
=-40mA
-2.5
V
V
CE
(sat)
-2
Collector-Emitter Saturation Voltage
I
C
=-16A; I
B
=-80mA
-4
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
=-5A; I
B
=-400mA
-3
V
V
BE
(on)
I
CER
Base-Emitter On voltage
I
C
=-10A ; V
CE
=-3V
V
CB
=-100V; R
BE
= 1KΩ;
V
CB
=-100V; R
BE
= 1KΩ; T
C
= 150℃
V
CE
=-50V; I
B
=0
-3
-1
-5
-3
V
Collector Cutoff Current
mA
I
CEO
Collector Cutoff current
mA
I
EBO
Emitter Cut-off current
V
EB
=-5V; I
C
= 0
-5
mA
h
FE
DC Current Gain
I
C
=-10A ; V
CE
=-3V
1000
isc Website：www.iscsemi.cn
2
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