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SE15PD

产品描述Surface Mount ESD Capability Rectifiers
文件大小84KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
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SE15PD概述

Surface Mount ESD Capability Rectifiers

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SE15PB, SE15PD, SE15PG, SE15PJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
eSMP
®
Series
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• Typical I
R
less than 0.1 μA
• ESD capability
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
DO-220AA (SMP)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
R
V
F
at I
F
= 1.0 A
T
J
max.
Package
Diode variations
1.5 A
100 V, 200 V, 400 V, 600 V
5 μA
0.868 V
175 °C
DO-220AA (SMP)
Single die
MECHANICAL DATA
Case:
DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
General purpose, polarity protection, and rail-to-rail
protection in both consumer and automotive applications.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Average forward current (fig. 1)
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
SE15PB
15B
100
SE15PD
15D
200
1.5
30
- 55 to + 175
SE15PG
15G
400
SE15PJ
15J
600
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. instantaneous
forward voltage
Max. reverse current
Max. reverse recovery time
Typical junction capacitance
TEST CONDITIONS
I
F
= 1.5 A
Rated V
R
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F (1)
I
R (2)
t
rr
C
J
TYP.
0.968
0.868
-
5.4
900
9.5
MAX.
1.05
0.95
5.0
50
-
-
UNIT
V
μA
ns
pF
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 14-Aug-13
Document Number: 89025
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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