Si3460DDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Avalanche Energy
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Temperature)
d, e
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
20
±8
7.9
6.3
6.2
a, b
5.0
a, b
20
2.2
1.4
a, b
8
3.2
2.7
1.7
1.7
a, b
1.1
a, b
- 55 to 150
260
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Symbol
t
≤
5s
Steady State
R
thJA
R
thJF
Typical
61
38
Maximum
74
46
Unit
°C/W
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Based on T
C
= 25 °C.
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
www.vishay.com
1
Si3460DDV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A, V
GS
=
0 V
0.8
11
3
7
4
T
C
= 25 °C
V
DD
= 10 V, R
L
= 2
Ω
I
D
≅
5 A, V
GEN
= 8 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 2
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.4
V
DS
= 10 V, V
GS
= 8 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 5.1 A
V
GS
=
2.5 V, I
D
= 4.7 A
V
GS
=
1.8 V, I
D
= 2.5 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
2.2
20
1.2
20
6
A
V
ns
nC
ns
666
93
41
12
6.7
0.95
0.5
2.1
6
11
21
8
5
12
19
8
4.2
12
20
32
16
10
18
29
16
ns
Ω
18
10.1
nC
pF
V
DS
= 10 V, I
D
= 5.1 A
20
0.023
0.027
0.031
35
0.028
0.032
0.038
S
Ω
0.4
20
21
- 2.6
1.0
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 5 V thru 1.8 V
4
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3
T
C
= 25 °C
2
5
10
5
V
GS
= 1.5 V
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
0
0.0
0.3
0.6
0.9
1
T
C
= 125 °C
T
C
= - 55 °C
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
900
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
C
iss
0.04
C - Capacitance (pF)
675
V
GS
= 1.8 V
0.03
V
GS
= 2.5 V
450
0.02
V
GS
= 4.5 V
225
C
oss
0.01
0
5
10
I
D
- Drain Current (A)
15
20
0
0
C
rss
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 5 A
V
GS
- Gate-to-Source Voltage (V)
1.5
R
DS(on)
- On-Resistance
6
1.7
Capacitance
V
GS
= 2.5 V; I
D
= 3 A
(Normalized)
1.3
V
DS
= 5 V
4
V
DS
= 10 V
V
DS
= 16 V
1.1
V
GS
= 4.5 V; I
D
= 5 A
0.9
2
0
0
3
6
9
12
15
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
www.vishay.com
3
Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
0.060
I
D
= 5 A
R
DS(on)
- On-Resistance (Ω)
0.045
T
J
= 125 °C
0.030
T
J
= 25 °C
0.015
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.1
0.0
0
0.3
0.6
0.9
1.2
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.80
25
On-Resistance vs. Gate-to-Source Voltage
20
0.65
I
D
= - 5 mA
V
GS(th)
(V)
Power (W)
15
0.50
I
D
= - 250 μA
0.35
10
5
0.20
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
100
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
Single Pulse Power (Junction-to-Ambient)
I
D
- Drain Current (A)
100 μA
1
1 ms
10 ms
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
100 ms
1 s, 10 s
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 66572
S10-0789-Rev. A, 05-Apr-10
Si3460DDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
8
I
D
- Drain Current (A)
Package Limited
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
3.5
1.5
2.8
1.2
Power (W)
1.4
Power (W)
0
25
50
75
100
125
150
2.1
0.9
0.6
0.7
0.3
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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