Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
2Bxxx
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
1.4
1.67
1.07
- 55 to 150
4.2
3.4
20
0.72
0.86
0.55
W
°C
5s
20
± 12
3.0
2.4
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Note:
a. Surface Mounted on FR4 board, t
≤
5 s.
t
≤
5s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
75
120
70
Maximum
100
145
85
°C/W
Unit
Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
www.vishay.com
1
Si3442BDV
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.6 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 4.0 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
295
75
45
3
0.65
0.95
2.7
35
50
20
15
30
55
75
30
25
60
ns
Ω
5
nC
pF
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
= 5 V, V
GS
= 4.5 V
V
DS
= 5 V, V
GS
= 2.5 V
V
GS
= 4.5 V, I
D
= 4 A
V
GS
= 2.5 V, I
D
= 3.4 A
V
DS
= 10 V, I
D
= 4.0 A
I
S
= 1.6 A, V
GS
= 0 V
10
4
0.045
0.070
11.3
0.75
1.2
0.057
0.090
0.6
1.8
± 100
1
5
V
nA
µA
A
Ω
S
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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