d. Maximum under steady state conditions is 120 °C/W.
Document Number: 65154
S10-1042-Rev. A, 03-May-10
www.vishay.com
1
t
≤
10 s
Steady-State
Symbol
R
thJA
R
thJF
Typ.
45
29
Max.
62.5
38
Unit
°C/W
Si4204DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.70
20
10
11
9
T
C
= 25 °C
2.7
50
1.2
40
20
A
V
ns
nC
nS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
0.4
V
DS
= 10 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, V
GS
= 0 V, I
D
= 1 MHz
2110
926
235
30
14.5
4.5
3.9
1.4
8
15
24
9
18
24
26
13
2.8
16
30
45
18
35
45
50
26
ns
Ω
45
22
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 10 A
20
0.0038
0.0047
50
0.0046
0.0060
1.0
20
20
- 5.8
2.4
100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10
V
thru 3
V
I
D
- Drain Current (A)
10
40
I
D
- Drain Current (A)
8
30
6
20
4
T
C
= 25 °C
2
T
C
= 125 °C
10
V
GS
= 2
V
0
0.0
T
C
= - 55 °C
0
2.0
2.5
0
1
2
3
4
5
0.5
1.0
1.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0060
2500
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0054
V
GS
= 4.5
V
0.0048
C - Capacitance (pF)
2000
Transfer Characteristics
1500
0.0042
V
GS
= 10
V
0.0036
1000
C
oss
500
C
rss
0.0030
0
10
20
30
40
50
0
0
5
10
15
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 5
V
6
V
DS
= 10
V
4
V
DS
= 15
V
2
R
DS(on)
- On-Resistance
1.6
1.8
I
D
= 10 A
Capacitance
1.4
(Normalized)
V
GS
= 10
V
1.2
V
GS
= 4.5
V
1.0
0.8
0
0
7
14
21
28
35
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65154
S10-1042-Rev. A, 03-May-10
www.vishay.com
3
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.020
I
D
= 10 A
T
J
= 150 °C
1
T
J
= 25 °C
0.1
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
0.016
0.012
0.008
T
J
= 125 °C
0.004
T
J
= 25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
50
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
40
I
D
= 5 mA
- 0.4
I
D
= 250
µA
- 0.7
Power (W)
- 0.1
30
20
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
0.01
0.01
DC
BVDSS Limited
1
0.1
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 65154
S10-1042-Rev. A, 03-May-10
Si4204DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
I
D
- Drain Current (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
Power (W)
1.6
Power (W)
0
25
50
75
100
125
150
2.4
0.9
0.6
0.8
0.3
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
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