The Si4720CY is two level-shifted P-Channel MOSFETs.
Operating together, these MOSFETs can be used as a
reverse blocking switch for battery disconnect applications.
It is a solution for multiple battery technology designs or
designs that require isolation from the power bus during
charging.
The Si4720CY is available in a 16-pin SOIC package and is
rated for the commercial temperature range of - 25 °C to
85 °C.
FEATURES
•
Solution for Bi-Directional Blocking
6 V to 30 V Operation
Ground Referenced Logic Level Inputs
Integrated Low R
DS(on)
MOSFET
Level-Shifted Gate Drive with Internal MOSFET
Two Independent Inputs
Ultra Low Power Consumption in Off State
(Leakage Current Only)
• Logic Supply Voltage is Not Required
•
•
•
•
•
•
FUNCTIONAL BLOCK DIAGRAM
6
G
1
IN
1
5
9, 10, 11
D
1
ESD
Logic
and
Gate
Drive
Level
Shift
GND
1
12
V
GS
Limiter
Half a circuit shown here.
7, 8
S
1
Document Number: 70664
S11-1185-Rev. C, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si4720
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage Referenced to GND V
S
, V
Da
V
SD
V
IN1
, V
IN2
V
GS
Storage Temperature
Power Dissipation
b
t = 10 s
t = Steady State
Symbol
Limit
- 0.3 to 32
- 0.3 to 30
- 0.3 to 15
20
- 55 to 150
2.5
1.5
°C
W
V
Unit
Notes:
a. V
SD
30 V
DC
.
b. Device mounted with all leads soldered to 1" x 1" FR4 with laminated copper PC board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
V
S
, V
D
V
IN1
, V
IN2
I
DS
Operating Temperature Range
Junction Temperature
Symbol
Limit
6 to 30
0 to 13.2
0 to 6
- 25 to 85
- 25 to 150
Unit
V
A
°C
This device has a maximum recommended operating junction temperature of 85 °C. This temperature limit is used for electrical specifications such as logic transition
voltages only and is not a reliability limit. The device can be used with junction temperatures up to 150 °C if relaxed specifications can be tolerated, although limits for
these specifications may not be given. Performance curves can be used to give an indication of specifications at higher temperatures, but are not guaranteed.
SPECIFICATIONS
Parameter
On-Resistance
Leakage Current
Supply Current
Input Voltage Low
Input Voltage High
Input Leakage Current
Turn-On Delay
Turn-Off Delay
Break-Before-Make
d
Rise Time
Fall Time
Voltage Across pin 6 and 7
Forward Diode
IN
to D or S
Symbol
r
DS
I
DS(off)
I
S(off)
I
S(on)
V
INL
V
INH
I
INH
t
ON(IN)
t
OFF(IN)
t
BBM
t
RISE
t
FALL
V
GS
V
SD
V
S
= 10 V, R
L
= 5
,
Figure 1
V
S
= 30
I
D
= - 1 A
Test Conditions
Unless Otherwise Specified
V
S
= 10 V, I
D
= 1 A, V
IN
= H
V
DS
= 10 V
V
S
= 21 V
V
S
= 10 and V
S
= 21
V
IN
= 5 V
V
S
= 10 V, R
L
= 5
,
Figure 1
Limits
Temp.
a
Room
Room
Room
Room
Full
Full
Full
Room
Room
Room
Room
Room
Room
Room
2.2
2.9
1.5
1.05
1.3
50
10.2
2.5
100
18
1.1
ns
V
2.5
5
10
2.1
µs
1.1
Min.
b
Typ.
c
0.0155
Max.
b
0.020
1
1
6
1
V
µA
µA
Unit
Notes:
a. Room = 25 °C, full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production testing.
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Document Number: 70664
S11-1185-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si4720
Vishay Siliconix
TIMING DIAGRAMS
10 V
SOURCE
V
IN
0V
50 %
50 %
DRAIN
V
D
5
t
ON(IN)
90 %
10 %
t
OFF(IN)
t
r
90 %
10 %
t
f
Figure 1.
PIN CONFIGURATION AND TRUTH
V
IN1
0
0
1
1
V
IN2
0
1
0
1
Switch 1
Off
Off
On
On
Switch 2
Off
On
Off
On
D
2
D
2
D
2
GND
2
IN
1
G
1(OUT)
S
1
S
1
1
2
3
4
5
6
7
8
SO-16
16
15
14
13
12
11
10
9
Top View
Order Number:
Si4720CY
S
2
S
2
G
2(OUT)
IN
2
GND
1
D
1
D
1
D
1
PIN DESCRIPTION
(Subject to Change)
Pin Number
1, 2, 3
4, 12
5
6
7, 8
9, 10, 11
13
14
15, 16
Symbol
D
2
GND
IN
1
G
1(OUT)
S
1
D
1
IN
2
G
2(OUT)
S
2
Description
Drain connection for MOSFET-2.
Ground
Logic input, IN
1
. High level turns on the switch.
Gate output to MOSFET-1.
Source connection for MOSFET-1.
Drain connection for MOSFET-1.
Logic input, IN
2
. High level turns on the switch.
Gate output to MOSFET-2.
Source connection for MOSFET-2.
Document Number: 70664
S11-1185-Rev. C, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si4720
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
0.030
R
DS(on)
- Drain-Source On-Resistance ()
0.10
0.025
r
DS(on)
- Drain-Source On-Resistance ()
0.08
0.020
V
S
= 10 V
0.015
0.06
0.04
I
S
= 1 A
0.02
0.010
0.005
0.000
0
1
2
3
I
S
(A)
4
5
6
0
0
2
4
6
8
10
V
S
(V)
12
14
16
18
20
On-Resistance vs. Drain Current
1.8
1.6
R
DS(on)
- On-Resistance
(Normalized)
1.4
V
S
= 10 V
I
S
= 1 A
On-Resistance vs. Source Voltage
2500
2000
C
OSS
(pF)
1.2
1.0
0.8
1500
1000
V
IN
= 0 V
500
0.6
0.4
- 50
0
- 25
0
25
50
75
100
125
150
0
5
10
15
V
S
(V)
20
25
30
T
J
- Junction Temperature (°C)
Normalized On-Resistance vs.
Junction Temperature
10.000
T
J
= 150 °C
1.000
1.000
10.000
Output Capacitance vs. Source Voltage
T
J
= 150 °C
T
J
= 25 °C
I
S
( µA)
I
S
( µA)
T
J
= 25 °C
0.100
0.100
0.010
0.010
0.001
0
5
10
15
V
S
(V)
20
25
30
0.001
0
5
10
15
V
S
(V)
20
25
30
Off-Supply Current vs. Source Voltage
On-Supply Current vs. Source Voltage
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Document Number: 70664
S11-1185-Rev. C, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4720
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
10
1.8
1.6
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
V
IN
Trip Point
1.4
V
S
= 21 V
1.2
V
S
= 10 V
1.0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
1.4
0.8
- 50
- 25
0
25
50
75
100
125
150
T
A
= Ambient Temperature (°C)
Drain-Source Diode Forward Voltage
4.0
V
S
= 10 V
Rl = 5
3.6
Input Voltage Trip Point vs. Temperature
2.0
V
S
= 10 V
Rl = 5
1.8
2.8
t
d(off)
(s)
- 25
0
25
50
75
100
125
150
t
d(on)
(µs)
3.2
1.6
1.4
2.4
1.2
2.0
- 50
1.0
- 50
- 25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Turn-On Delay vs. Temperature
Turn-off Delay vs. Temperature
1.8
V
S
= 10 V
Rl = 5
80
V
S
= 10 V
Rl = 5
1.6
70
1.4
t
rise
(µs)
t
fall
(ns)
60
1.2
50
1.0
40
0.8
30
0.6
- 50
- 25
0
25
50
75
100
125
150
20
- 50
- 25
0
25
50
75
100
125
150
Temperature (°C)
Temperature (°C)
Rise Time vs. Temperature
Fall Time vs. Temperature
Document Number: 70664
S11-1185-Rev. C, 13-Jun-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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