d. Maximum under Steady State conditions is 80 °C/W.
b, d
Symbol
R
thJA
R
thJF
Typ.
29
13
Max.
35
16
Unit
°C/W
Document Number: 64811
S09-0871-Rev. A, 18-May-09
www.vishay.com
1
Si4628DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On -State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 13 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2 A
0.44
28
21
15
13
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.4
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
3450
810
260
58
27.5
8.3
7.5
1.7
28
20
39
13
12
10
36
9
3.4
55
40
75
26
24
20
70
18
7
70
0.53
55
42
ns
Ω
87
42
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
40
0.0024
0.0030
73
0.0030
0.0038
0.10
7.5
30
1.0
2.5
± 100
0.25
70
V
nA
mA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode and Schottky Characteristics
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64811
S09-0871-Rev. A, 18-May-09
Si4628DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
V
GS
= 10
V
thru 3
V
56
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
42
3
28
2
T
C
= 25 °C
1
T
C
= 125 °C
14
V
GS
= 2
V
0
0.0
0.5
1.0
1.5
2.0
2.5
T
C
= - 55 °C
0
0.0
0.6
1.2
1.8
2.4
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0035
4500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.0032
V
GS
= 4.5
V
0.0029
C - Capacitance (pF)
3600
C
iss
2700
0.0026
V
GS
= 10
V
0.0023
1800
C
oss
900
C
rss
0.0020
0
14
28
42
56
70
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.4
1.6
I
D
= 20 A
Capacitance
V
GS
= 10
V
6
V
DS
= 15
V
V
DS
= 10
V
(Normalized)
1.2
V
GS
= 4.5
V
1.0
4
V
DS
= 20
V
2
0.8
0
0
12
24
36
48
60
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64811
S09-0871-Rev. A, 18-May-09
www.vishay.com
3
Si4628DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.015
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
0.012
I
S
- Source Current (A)
T
J
= 150 °C
10
0.009
T
J
= 25 °C
1
0.006
T
J
= 125 °C
0.003
T
J
= 25 °C
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
10
-1
200
On-Resistance vs. Gate-to-Source Voltage
10
-2
I
R
- Reverse (A)
20
V
30
V
160
10
-4
Power (W)
10
-3
120
10
V
80
10
-5
40
10
-6
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
DC
BVDSS Limited
0.1
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 64811
S09-0871-Rev. A, 18-May-09
Si4628DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
45
36
I
D
- Drain Current (A)
27
18
9
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Power (W)
6
Power (W)
0
25
50
75
100
125
150
1.2
4
0.8
2
0.4
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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