Si4532CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
7
6
5
D
1
D
1
D
2
D
2
D
1
S
2
• DC/DC Converter
• Load Switch
G
2
G
1
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
T
C
= 25 °C
T
A
= 25 °C
I
DM
I
S
I
SM
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
6.0
4.9
4.9
b, c
3.9
b, c
24
2.3
1.5
b, c
24
7
2.5
2.78
1.78
1.78
b, c
1.14
b, c
- 55 to 150
N-Channel
30
± 20
- 4.3
- 3.4
- 3.4
b, c
- 2.7
b, c
- 15
- 2.3
- 1.5
b, c
- 12
8
3.2
2.78
1.78
1.78
b, c
1.14
b, c
°C
W
mJ
A
P-Channel
- 30
Unit
V
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
t
10 s
Steady State
Symbol
R
thJA
R
thJF
Typ.
57
37
Max.
70
45
P-Channel
Typ.
57
37
Max.
70
45
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4532CDY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Body Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
II
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
=5 V, V
GS
= 10 V
V
DS
= -5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 3.5 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 3.5 A
V
GS
= 4.5 V, I
D
= 2.8 A
V
GS
= - 4.5 V, I
D
= - 2.5 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 2.5 A
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 2.5 A
N-Channel
V
DS
= 15 V, V
GS
= 4.5 V I
D
= 2.5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2.5 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
2.0
305
340
65
67
29
51
6
7.8
2.75
4.1
1.3
1.3
0.9
1.8
3.1
10
6.2
20
9
12
4.5
6.2
nC
pF
g
fs
V
DS
= 15 V, I
D
= 2.5 A
V
DS
= - 15 V, I
D
= - 3.5 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 12
0.038
0.073
0.052
0.113
7
7
0.047
0.089
0.065
0.140
S
1.0
- 1.0
30
- 30
33
- 33
- 5.8
4.5
3.0
- 3.0
100
- 100
1
-1
5
-5
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
www.vishay.com
2
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4532CDY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 1.25 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 2.5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
I
S
= 1.25 A
I
S
= - 0.75 A
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
- 0.8
14
17
6
11
9
12
5
5
ns
2.3
- 2.3
24
- 12
1.2
- 1.2
21
30
10
20
V
ns
nC
A
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 10 V, R
g
= 1
P-Channel
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 10 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= - 15 V, R
L
= 15
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 1
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
7
5.5
12
13
14
17
6
7.7
16
40
16
40
9
20
9
17
11
10
18
25
25
30
10
15
30
60
30
60
18
40
18
30
ns
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
24
1.2
V
GS
= 10
V
thru 6
V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
18
1.0
0.8
V
GS
= 5
V
12
0.6
T
C
= 25 °C
0.4
T
C
= 125 °C
0.2
6
V
GS
= 4
V
0
0
2
4
6
8
10
0.0
0
1
T
C
= - 55 °C
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.10
400
350
R
DS(on)
- On-Resistance ()
0.08
300
C - Capacitance (pF)
0.06
250
200
150
100
0.02
50
0.00
0
2
4
6
8
10
12
14
16
0
0
5
C
rss
Transfer Characteristics
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
0.04
C
oss
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 2.5 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
6
V
DS
= 22.5
V
4
R
DS(on)
- On-Resistance
V
DS
= 7.5
V
1.5
1.7
I
D
= 6 A
Capacitance
V
GS
= 10
V
(Normalized)
1.3
V
GS
= 4.5
V
1.1
2
0.9
0
0
2
4
6
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
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4
On-Resistance vs. Junction Temperature
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4532CDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
0.25
T
J
= 150 °C
1
R
DS(on)
- On-Resistance (Ω)
0.20
I
S
- Source Current (A)
T
J
= 25 °C
0.15
0.10
T
J
= 125 °C
0.05
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
V
GS
- Gate-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
50
0.2
I
D
= 250 µA
V
GS(th)
Variance (V)
0.0
40
Power (W)
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
125
150
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
Single Pulse Power, Junction-to-Ambient
10
µs
100
µs
I
D
- Drain Current (A)
1 ms
1
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
1
10
10 ms
100 ms
1s
10 s
100 s, DC
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64805
S11-0652-Rev. B, 11-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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