Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
R
DS(on)
(Ω)
0.0145 at V
GS
= 10 V
0.017 at V
GS
= 4.5 V
0.033 at V
GS
= - 4.5 V
0.050 at V
GS
= - 2.5 V
I
D
(A)
9.6
8.6
- 6.2
-5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS directive 2002/95/EC
P-Channel
- 20
APPLICATIONS
• Level Shift
• Load Switch
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top
View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
D
1
S
2
Ordering Information:
Si4511DY-T1-E3
(Lead (Pb)-free)
Si4511DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
S
1
D
2
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
N-Channel
P-Channel
10 s
Steady State
10 s
Steady State
20
- 20
± 16
± 12
9.6
7.2
- 6.2
- 4.6
7.7
5.8
- 4.9
- 3.7
40
- 40
1.7
0.9
- 1.7
- 0.9
2
1.1
2
1.1
1.3
0.7
1.3
0.7
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t
≤
10 s.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
N-Channel
Typ.
Max.
50
62.5
85
110
30
40
P-Channel
Typ.
Max.
50
62.5
90
110
30
35
Unit
°C/W
Document Number: 72223
S09-0867-Rev. E, 18-May-09
www.vishay.com
1
Si4511DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
=
5 V, V
GS
= 10 V
V
DS
=
- 5 V, V
GS
= - 4.5 V
V
GS
= 10 V, I
D
= 9.6 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 6.2 A
V
GS
= 4.5 V, I
D
= 8.6 A
V
GS
= - 2.5 V, I
D
= - 5 A
Forward Transconductance
b
Diode Forward Voltag
b
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 6.2 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 9.6 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
P-Channel
V
DD
= - 10 V, R
L
= 10
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= 1.7 A, dI/dt = 100 A/µs
I
F
= - 1.7 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
11.5
17
3.7
4.1
3.3
4.3
12
25
12
30
55
70
15
50
50
40
20
40
20
45
85
105
25
75
100
80
ns
18
20
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 9.6 A
V
DS
= - 15 V, I
D
= - 6.2 A
I
S
= 1.7 A, V
GS
= 0 V
I
S
= - 1.7 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
- 40
0.0115
0.022
0.0135
0.035
33
17
0.8
- 0.8
1.2
- 1.2
0.0145
0.033
0.017
0.050
S
V
Ω
0.6
- 0.6
1.8
- 1.4
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72223
S09-0867-Rev. E, 18-May-09
Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10
V
thru 4
V
32
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
3
V
32
40
24
24
16
16
T
C
= 125 °C
8
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
8
2
V
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.020
2000
Transfer Characteristics
R
DS(on)
- On-Resistance (
Ω
)
0.015
1600
V
GS
= 10
V
C - Capacitance (pF)
V
GS
= 4.5
V
C
iss
1200
0.010
800
C
oss
C
rss
400
0.005
0.000
0
8
16
24
32
40
0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
1.6
Capacitance
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
6
R
DS(on)
- On-Resistance
(
N
ormalized)
V
DS
= 10
V
I
D
= 9.6 A
1.4
V
GS
= 10
V
I
D
= 9.6 A
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
18
21
24
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 72223
S09-0867-Rev. E, 18-May-09
www.vishay.com
3
Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
0.05
R
DS(on)
- On-Resistance ( )
0.04
I
D
= 9.6 A
0.03
I
D
= 3 A
0.02
I
S
- So
u
rce C
u
rrent (A)
10
T
J
= 150 °C
T
J
= 25 °C
0.01
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.4
I
D
= 250
µA
30
25
20
Po
w
er (
W
)
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
V
ariance (
V
)
0.0
- 0.2
15
- 0.4
10
- 0.6
5
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
I
DM
Limited
P(t) = 0.0001
10
I
D
- Drain Current (A)
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
T
C
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
P(t) = 1
P(t) = 10
DC
Single Pulse Power
1
I
D(on)
Limited
0.1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
DS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
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4
Document Number: 72223
S09-0867-Rev. E, 18-May-09
Si4511DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square
Wave
Pulse Duration (s)
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=
85
°C
3. T
JM
− T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
N
ormalized Effecti
v
e Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72223
S09-0867-Rev. E, 18-May-09
www.vishay.com
5
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