a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
S15-0346-Rev. C, 23-Feb-15
Document Number: 67999
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
m
m
S
N-Channel MOSFET
SYMBOL
t
≤
5s
R
thJA
TYPICAL
105
200
MAXIMUM
135
260
UNIT
°C/W
Si8802DB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1 A
V
GS
= 2.5 V, I
D
= 1 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 1.8 V, I
D
= 0.5 A
V
GS
= 1.5 V, I
D
= 0.2 A
V
GS
= 1.2 V, I
D
= 0.1 A
Forward Transconductance
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 1 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= 1 A, V
GS
= 0 V
T
A
= 25 °C
-
-
-
-
-
-
-
-
-
0.7
20
5
14
60
0.7
15
1.2
40
10
-
-
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 4 V, R
L
= 4
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1 A
-
-
-
-
-
-
-
-
4.3
0.44
0.72
3.5
5
15
22
7
6.5
-
-
-
10
30
40
15
ns
Ω
nC
g
fs
V
DS
= 4 V, I
D
= 1 A
8
-
-
0.35
-
-
-
10
-
-
-
-
-
-
-
7
-2.1
-
-
-
-
-
0.044
0.049
0.055
0.060
0.080
13
-
-
-
0.7
± 100
1
10
-
0.054
0.060
0.068
0.086
0.135
-
S
Ω
μA
A
V
mV/°C
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0346-Rev. C, 23-Feb-15
Document Number: 67999
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8802DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
V
GS
= 5 V thru 2 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Vishay Siliconix
9
V
GS
= 1.5 V
6
6
4
T
C
= 25
°C
T
C
= 125
°C
T
C
= - 55
°C
3
V
GS
= 1 V
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
3
2
0
0.0
0.3
0.6
0.9
1.2
V
GS
-
Gate-to-Source
Voltage (V)
1.5
Output Characteristics
Transfer Characteristics
0.16
600
V
GS
= 1.2 V
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
500
C
iss
V
GS
= 1.5 V
0.08
V
GS
= 1.8 V
400
300
200
C
oss
100
C
rss
0
0.04
V
GS
= 4.5 V
V
GS
= 2.5 V
0
0
3
6
9
12
15
I
D
- Drain Current (A)
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1 A
V
GS
-
Gate-to-Source
Voltage (V)
4
V
DS
= 4 V
3
V
DS
= 2 V
V
DS
= 6.4 V
2
1.4
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 1 A
1.2
V
GS
= 1.5 V, I
D
= 0.2 A
1.0
V
GS
= 1.2 V, I
D
= 0.1 A
0.8
1
0
0
1
2
3
4
Q
g
- Total
Gate
Charge (nC)
5
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0346-Rev. C, 23-Feb-15
On-Resistance vs. Junction Temperature
Document Number: 67999
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8802DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.15
I
D
= 1 A
0.12
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
Vishay Siliconix
0.09
T
J
= 150
°C
1
T
J
= 25
°C
0.06
T
J
= 125
°C
0.03
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Source-Drain Diode Forward Voltage
0.8
On-Resistance vs. Gate-to-Source Voltage
14
12
0.7
10
Power (W)
125
150
V
GS(th)
(V)
0.6
I
D
= 250 μA
0.5
8
6
4
0.4
2
0.3
- 50
- 25
0
25
50
75
100
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100 μs
1 ms
1
10 ms
0.1
T
A
= 25
°C
10
s,
1
s,
100 ms
DC
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-0346-Rev. C, 23-Feb-15
Document Number: 67999
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8802DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
3.5
3
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Vishay Siliconix
0.8
Power Dissipation (W)
0.6
I
D
- Drain Current (A)
0.4
0.2
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C,n using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. C, 23-Feb-15
Document Number: 67999
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
