d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W.
S14-1030-Rev. B, 12-May-14
Document Number: 68785
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7748DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 2 A
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 15 A
MIN.
30
1.3
-
-
-
40
-
-
-
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
0.075
6.7
-
0.0039
0.0053
80
3770
575
215
61
27.8
10.2
7.3
1
15
9
35
8
36
16
44
16
-
-
0.42
25
13
12
13
MAX.
-
2.7
± 100
0.300
65
-
0.0048
0.0066
-
-
-
-
92
42
-
-
2
30
18
70
16
75
30
85
30
50
150
0.55
50
26
-
-
ns
Ω
nC
pF
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
V
nA
mA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 μs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-1030-Rev. B, 12-May-14
Document Number: 68785
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7748DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
V
GS
= 10 thru 4 V
64
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
Vishay Siliconix
48
6
T
C
= 25 °C
4
32
V
GS
= 3 V
16
2
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.008
4500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
0.007
C - Capacitance (pF)
3600
0.006
V
GS
= 4.5 V
2700
0.005
V
GS
= 10 V
0.004
1800
C
oss
900
C
rss
0.003
0
14
28
42
56
70
I
D
- Drain Current (A)
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 15 V
4
V
DS
= 20 V
2
1.8
I
D
= 20 A
1.5
Capacitance
V
GS
= 10 V
1.2
V
GS
= 4.5 V
0.9
0.6
0
0.0
12.4
24.8
37.2
49.6
62.0
Q
g
- Total Gate Charge (nC)
0.3
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S14-1030-Rev. B, 12-May-14
On-Resistance vs. Junction Temperature
Document Number: 68785
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7748DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.025
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
T
J
= 150 °C
1
T
J
= 25 °C
0.020
Vishay Siliconix
0.015
0.1
0.010
T
J
= 125 °C
0.005
T
J
= 25 °C
0.01
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
-1
200
10
-2
I
R
- Reverse Current (A)
30 V
10
-3
20 V
10
-4
10 V
10
-5
Power (W)
125
150
160
120
80
40
10
-6
0
25
50
75
100
T
J
- Junction Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
Single Pulse Power, Junction-to-Ambient
1000
100
I
D
- Drain Current (A)
I
DM
Limited
I
D
Limited
100 us
10
1 ms
10 ms
Limited by R
DS(on)
*
1
100 ms
1
s
0.1
T
C
= 25
°C
Single
Pulse
10
s
BVDSS Limited
DC
0.01
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
100
Safe Operating Area, Junction-to-Ambient
S14-1030-Rev. B, 12-May-14
Document Number: 68785
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7748DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
Vishay Siliconix
60
I
D
- Drain Current (A)
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
70
2.25
56
1.80
Power (W)
Power (W)
0
25
50
75
100
125
150
42
1.35
28
0.90
14
0.45
0
T
C
- Case Temperature (°C)
0.00
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1030-Rev. B, 12-May-14
Document Number: 68785
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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