Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
−55
to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 68126
S-80743⎯Rev. A, 14-Apr-08
www.vishay.com
1
SPICE Device Model Si7738DP
Vishay Siliconix
SPECIFICATIONS (T
J
= 25°C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Drain-Source On-State Resistance
a
Forward Transconductance
a
Body Diode Voltage
V
GS(th)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 7.7 A
V
DS
= 15 V, I
D
= 7.7 A
I
S
= 6.2 A
2.8
0.031
17
0.90
0.031
22
0.80
V
Ω
S
V
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
DS
= 75 V, V
GS
= 10 V, I
D
= 7.7 A
V
DS
= 75 V, V
GS
= 0 V, f = 1 MHz
2040
163
42
34
8
9
2100
160
45
35
8
9
nC
pF
Notes
a. Pulse test; pulse width
≤
300
μs,
duty cycle
≤
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 68126
S-80743⎯Rev. A, 14-Apr-08
SPICE Device Model Si7738DP
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (T
J
=25°C UNLESS OTHERWISE NOTED)
Document Number: 68126
S-80743⎯Rev. A, 14-Apr-08
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
不可否认，电池作为电动汽车的动力源，摆在最重要的位置，而影响纯电动车续航里程的因素众多，但总的来说主要有动力电池容量、能量密度、电池材质、整车质量、空气阻力系数和电机工作效率等因素。 而这其中，整车重量是影响电动车续航的巨大因素！相关研究表明，新能源汽车每减少100Kg重量，续航里程可提升10%-11%，还可以减少20%的电池成本以及20%的日常损耗成本。例如：特斯拉Model X 100D...[详细]
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
