c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 94 °C/W.
f. Based on T
C
= 25 °C.
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
www.vishay.com
1
Si7228DN
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 7 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 7 A, V
GS
=
0 V
0.8
20
16
13
7
T
C
= 25 °C
19
35
1.2
30
25
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 2.1
Ω
I
D
≅
7 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 2.1
Ω
I
D
≅
7 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.6
V
DS
= 15 V, V
GS
= 10 V, I
D
= 8.8 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 8.8 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
480
115
46
8.5
4.1
1.5
1.3
3.2
13
12
12
10
5
10
15
10
6.4
20
20
20
15
10
15
25
15
ns
Ω
13
6.2
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 8.8 A
V
GS
=
4.5 V, I
D
= 7.8 A
V
DS
= 15 V, I
D
= 8.8 A
20
0.0165
0.0205
20
0.020
0.025
1
30
34
-5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
Si7228DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
35
V
GS
= 10
V
thru 5
V
30
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
25
20
15
V
GS
= 3
V
10
5
V
GS
= 2
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
25 °C, unless otherwise noted
V
GS
= 4
V
10
6
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
2.5
3.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.035
800
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.030
600
C - Capacitance (pF)
C
iss
0.025
V
GS
= 4.5
V
0.020
V
GS
= 10
V
0.015
C
rss
0.010
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
30
400
200
C
oss
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
=
8.8
A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 15
V
6
V
DS
= 10
V
V
DS
= 24
V
4
1.6
1.8
I
D
=
8.8
A
Capacitance
1.4
(Normalized)
V
GS
= 10
V
1.2
V
GS
= 4.5
V
1.0
2
0.8
0
0
2
4
6
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
www.vishay.com
3
Si7228DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.08
I
D
=
8.8
A
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.06
T
J
= 150 °C
10
T
J
= 25 °C
0.04
T
J
= 125 °C
0.02
T
J
= 25 °C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.0
50
On-Resistance vs. Gate-to-Source Voltage
1.8
40
V
GS(th)
(V)
1.6
I
D
= 250
µA
1.4
Power (W)
30
20
1.2
10
1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100
µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
T
A
= 25 °C
Single Pulse
0.1
BVDSS Limited
0.01
0.1
100 ms
1s
10 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64806
S09-0666-Rev. A, 20-Apr-09
Si7228DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
25
25
I
D
- Drain Current (A)
Power Dissipation (W)
20
20
15
15
10
10
5
5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
编译自semiengineering 业界越来越关注人工智能的功耗问题，但这个问题并没有简单的解决方案。这需要深入了解应用、半导体和系统层面的软件和硬件架构，以及所有这些的设计和实现方式。每个环节都会影响总功耗和提供的效用。这是最终必须做出的权衡。 但首先，必须解决效用问题。电力是否被浪费了？“我们将电力用于有价值的用途，”Ansys（现为新思科技旗下公司）产品营销总监 Marc Swi...[详细]
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