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New Product

Si7224DN

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

Channel 1

30

R

DS(on)

(Ω)

0.035 at V

GS

= 10 V

0.042 at V

GS

= 4.5 V

0.028 at V

GS

= 10 V

0.035 at V

GS

= 4.5 V

I

D

(A)

6

a

6

a

6

a

FEATURES

Q

g

(Typ.)

4.5 nC

•

Halogen-free Option Available

• TrenchFET

®

Power MOSFETs

RoHS

APPLICATIONS

COMPLIANT

Channel 2

30

6

a

5.5 nC

• Notebook PC System Power

• Low Current POL

PowerPAK

®

1212-8

D

1

3.30 mm

G1

3.30 mm

S1

D

2

1

2

S2

3

4

D1

G2

8

7

D1

D2

G

1

6

5

G

2

D2

Bottom

View

S

1

S

2

N-Channel

MOSFET

Ordering Information:

Si7224DN-T1-E3 (Lead (Pb)-free)

Si7224DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel

MOSFET

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

T

C

= 25 °C

T

C

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

T

C

= 25 °C

T

A

= 25 °C

T

C

= 25 °C

T

C

= 70 °C

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

Channel 1

30

± 16

6

a

6

a

6

a, b, c

5.2

b, c

25

6

a

1.7

b, c

17.8

11.4

2.5

b, c

1.6

b, c

- 55 to 150

260

Channel 2

30

± 20

6

a

6

a

6

a, b, c

5.9

b, c

30

6

a

2.2

b, c

23

14.8

2.6

b, c

1.7

b, c

A

Unit

V

Continuous Drain Current (T

J

= 150 °C)

Pulsed Drain Current

Source Drain Current Diode Current

Maximum Power Dissipation

P

D

T

J

, T

stg

W

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

d, e

°C

THERMAL RESISTANCE RATINGS

Channel 1

Parameter

b, f

Channel 2

Typ.

Max.

Unit

t

≤

10 s

40

50

38

48

Maximum Junction-to-Ambient

°C/W

Maximum Junction-to-Case (Drain)

Steady State

5.6

7

4.3

5.4

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (

http://www.vishay.com/ppg?73257

). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequade bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 94 °C/W.

Document Number: 69500

S-81549-Rev. B, 07-Jul-08

www.vishay.com

1

Symbol

R

thJA

R

thJC

Typ.

Max.

New Product

Si7224DN

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Drain-Source Breakdown Voltage

V

DS

Temperature Coefficient

V

GS(th)

Temperature Coefficient

Gate Threshold Voltage

Gate-Body Leakage

V

DS

ΔV

DS

/T

J

ΔV

GS(th)

/T

J

V

GS(th)

I

GSS

V

GS

= 0 V, I

D

= 250 µA

I

D

= 250 µA

I

D

= 250 µA

V

DS

= V

GS

, I

D

= 250 µA

V

DS

= 0 V, V

GS

= ± 16 V

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= 30 V, V

GS

= 0 V

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C

On-State Drain Current

b

I

D(on)

V

DS

≥

5 V, V

GS

= 10 V

V

GS

= 10 V, I

D

= 6.5 A

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 7.4 A

V

GS

= 4.5 V, I

D

= 5.9 A

V

GS

= 4.5 V, I

D

= 6.6 A

Forward Transconductance

b

Dynamic

a

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

Channel 2

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

V

DS

= 15 V, V

GS

= 10 V, I

D

= 6.5 A

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 10 V, I

D

= 7.4 A

Channel 1

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 6.5 A

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Q

gs

Q

gd

R

g

Channel 2

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 7.4 A

f = 1 MHz

Ch 1

Channel 1

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

570

720

80

115

35

50

9.5

12

4.5

5.5

1.5

2.5

1.2

1.7

3.3

2.7

Ω

14.5

18

7

8.5

nC

pF

g

fs

V

DS

= 15 V, I

D

= 6.5 A

V

DS

= 15 V, I

D

= 7.4 A

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

15

0.027

0.022

0.032

0.029

22

21

0.035

0.028

0.042

0.035

S

Ω

1

1.5

30

37

32

-5

-6

2.2

3

± 100

1

10

A

µA

V

nA

mV/°C

V

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

www.vishay.com

2

Document Number: 69500

S-81549-Rev. B, 07-Jul-08

New Product

Si7224DN

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Dynamic

a

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

Pulse Diode Forward Current

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

a

Symbol

Test Conditions

Ch 1

Channel 1

V

DD

= 15 V, R

L

= 2.9

Ω

I

D

≅

5.2 A, V

GEN

= 4.5 V, R

g

= 1

Ω

Channel 2

V

DD

= 15 V, R

L

= 2.6

Ω

I

D

≅

5.9 A, V

GEN

= 4.5 V, R

g

= 1

Ω

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Channel 1

V

DD

= 15 V, R

L

= 2.9

Ω

I

D

≅

5.2 A, V

GEN

= 10 V, R

g

= 1

Ω

Channel 2

V

DD

= 15 V, R

L

= 2.6

Ω

I

D

≅

5.9 A, V

GEN

= 10 V, R

g

= 1

Ω

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

I

S

= 5.2 A, V

GS

= 0 V

I

S

= 5.9 A, V

GS

= 0 V

Ch 1

Ch 2

Ch 1

Ch 2

Channel 1

I

F

= 5.2 A, dI/dt = 100 A/µs, T

J

= 25 °C

Channel 2

I

F

= 5.9 A, dI/dt = 100 A/µs, T

J

= 25 °C

Ch 1

Ch 2

Ch 1

Ch 2

Ch 1

Ch 2

Min.

Typ.

12

20

12

10

5

10

15

10

Max.

20

30

20

15

10

15

25

15

6

25

30

Unit

t

d(on)

t

r

t

d(off)

t

f

t

d(on)

t

r

t

d(off)

t

f

ns

I

S

I

SM

V

SD

t

rr

Q

rr

t

a

t

b

T

C

= 25 °C

A

0.8

15

20

10

12

9

12

6

8

1.2

30

40

20

V

ns

nC

ns

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Document Number: 69500

S-81549-Rev. B, 07-Jul-08

www.vishay.com

3

New Product

Si7224DN

Vishay Siliconix

CHANNEL 1 TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

25

V

GS

= 10 thru 4 V

20

I

D

- Drain Current (A)

I

D

- Drain Current (A)

10

9

8

7

6

5

4

T

C

= 125 °C

3

2

1

0

0.0

0

0.4

0.8

1.2

1.6

2.0

0

0.5

1.0

1.5

2.0

2.5

3.0

T

C

= 25 °C

T

C

= - 55 °C

15

V

GS

= 3 V

10

5

V

DS

- Drain-to-Source Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Output Characteristics

0.040

Transfer Characteristics

800

R

DS(on)

- On-Resistance (Ω)

0.036

V

GS

= 4.5

V

600

C - Capacitance (pF)

C

iss

0.032

V

GS

= 10

V

0.028

400

200

0.024

C

oss

0

5

10

15

20

25

0

I

D

- Drain Current (A)

C

rss

5

10

15

20

25

30

0.020

V

DS

- Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

10

I

D

= 6.5 A

V

GS

- Gate-to-Source Voltage (V)

8

V

DS

= 15 V

6

V

DS

= 24 V

4

R

DS(on)

- On-Resistance

(Normalized)

1.6

1.8

I

D

= 6.5 A

Capacitance

1.4

V

GS

= 10

V,

4.5

V

1.2

1.0

2

0.8

0

2

4

6

8

10

0.6

- 50

- 25

0

25

50

75

100

125

150

Q

g

- Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

www.vishay.com

4

On-Resistance vs. Junction Temperature

Document Number: 69500

S-81549-Rev. B, 07-Jul-08

New Product

Si7224DN

Vishay Siliconix

CHANNEL 1 TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

100

0.10

I

D

= 6.5 A

R

DS(on)

- On-Resistance (Ω)

0.08

I

S

- Source Current (A)

T

J

= 150 °C

10

0.06

125 °C

0.04

25 °C

T

J

= 25 °C

1

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

SD

- Source-to-Drain Voltage (V)

0.02

0

2

4

6

8

10

V

GS

- Gate-to-Source

Voltage

(V)

Source-Drain Diode Forward Voltage

2.2

30

On-Resistance vs. Gate-to-Source Voltage

2.0

I

D

= 250 µA

1.8

Power (W)

V

GS(th)

(V)

25

20

1.6

15

1.4

10

1.2

5

1.0

- 50

- 25

0

25

50

75

100

125

150

0

0.001

0.01

0.1

1

Time (s)

10

100

1000

T

J

- Temperature (°C)

Threshold Voltage

100

Limited

by

R

DS(on)

*

10

I

D

- Drain Current (A)

100

µs

Single Pulse Power

1 ms

1

10 ms

100 ms

1s

10 s

DC

BVDSS Limited

0.01

0.1

*

V

GS

1

10

100

0.1

T

A

= 25 °C

Single Pulse

V

DS

- Drain-to-Source

Voltage

(V)

minimum

V

GS

at

which

R

DS(on)

is specified

Safe Operating Area, Junction-to-Ambient

Document Number: 69500

S-81549-Rev. B, 07-Jul-08

www.vishay.com

5

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