Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
N-Channel
20
± 12
6.7
4.2
5.7
b, c
4.5
b, c
30
1.3
0.9
b, c
1.6
1.0
1.1
b, c
0.7
b, c
- 55 to 150
- 6.1
- 4.9
- 5.1
b, c
- 4.1
b, c
- 30
- 1.4
- 1.0
b, c
1.7
1.1
1.2
b, c
0.76
b, c
A
P-Channel
- 20
Unit
V
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
P
D
T
J
, T
stg
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
t
≤
10 s
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 145 °C/W.
b, d
P-Channel
Typ.
81
57
Max.
105
75
Unit
°C/W
Symbol
R
thJA
R
thJF
Typ.
85
62
Max.
110
80
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
www.vishay.com
1
New Product
Si6562CDQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 5.7 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 5.1 A
V
GS
= 2.5 V, I
D
= 4.4 A
V
GS
= - 2.5 V, I
D
= - 4.2 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5.7 A
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 5.1 A
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.7 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5.1 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
850
1200
150
260
70
45
15
34
6.7
17
1.8
3
0.9
5.5
2
6
Ω
23
51
11
30
nC
pF
g
fs
V
DS
= 10 V, I
D
= 5.7 A
V
DS
= - 10 V, I
D
= - 5.1 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
30
- 30
0.018
0.024
0.029
0.036
17
22
0.022
0.030
0.036
0.045
S
Ω
0.6
- 0.6
20
- 20
22
- 21
- 3.5
3.5
1.5
- 1.5
± 100
± 100
1
-1
10
- 10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 68954
S-82575-Rev. A, 27-Oct-08
New Product
Si6562CDQ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 2.2
Ω
I
D
≅
4.5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 10 V, R
L
= 2.4
Ω
I
D
≅
- 4.1 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 2.2
Ω
I
D
≅
4.5 A, V
GEN
= 10 V, R
g
= 1
Ω
P-Channel
V
DD
= - 10 V, R
L
= 2.4
Ω
I
D
≅
- 4.1 A, V
GEN
= - 10 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
S
= 4.5 A, V
GS
= 0 V
I
S
= - 4.1 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
I
F
= 4.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 4.1 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
12
30
10
25
25
45
10
15
10
10
10
10
20
45
8
15
Max.
20
45
15
40
40
70
15
25
15
15
15
15
30
70
15
25
1.3
- 1.4
30
- 30
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.8
- 0.8
15
35
6
21
7.6
18
7.4
17
1.2
- 1.2
30
55
12
35
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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