Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
12
±8
21.5
17.2
16.1
b,c
12.9
b,c
50
4.0
2.3
b,c
20
20
4.45
2.85
2.50
b,c
1.6
b,c
- 55 to 150
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
40
23
Maximum
50
28
Unit
°C/W
Si4866BDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 9.5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.3 A
0.62
50
35
19
31
T
C
= 25 °C
4
50
1.1
80
55
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 6 V, R
L
= 1.2
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 6 V, R
L
= 1.2
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 6 V, V
GS
= 2.5 V, I
D
= 10 A
V
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
5020
1305
805
52
29.5
6.2
8.9
0.8
26
18
85
32
13
12
57
9
1.3
40
30
130
50
25
24
90
18
ns
Ω
80
45
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 12 V, V
GS
= 0 V
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 12 A
V
GS
= 2.5 V, I
D
= 10 A
V
GS
= 1.8 V, I
D
= 8 A
V
DS
= 15 V, I
D
= 12 A
20
0.0042
0.0048
0.006
80
0.0053
0.0060
0.0074
S
Ω
0.4
12
12
- 3.5
1.0
± 100
1
10
V
mV/°C
V
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
1.5
V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.6
2.0
30
1.2
25 °C
20
0.8
T
C
= 125 °C
10
1
V
0
0.0
0.5
1.0
1.5
2.0
2.5
0.4
- 55 °C
0.0
0.0
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0065
V
GS
= 1.8
V
C - Capacitance (pF)
7000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.0060
5600
C
iss
0.0055
V
GS
= 2.5
V
0.0050
4200
2800
C
oss
C
rss
0.0045
V
GS
= 4.5
V
1400
0.0040
0
10
20
30
40
50
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
4.5
I
D
= 10 A
V
GS
- Gate-to-Source
Voltage
(V)
3.6
V
DS
= 4
V
V
DS
= 6
V
2.7
R
DS(on)
- On-Resistance
(Normalized)
1.3
1.5
I
D
= 12 A
Capacitance
V
GS
= 1.8
V
1.1
V
GS
= 4.5
V
1.8
V
DS
=
8 V
0.9
0.9
0.0
0
11
22
33
44
55
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.020
I
D
= 12 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
150 °C
1
25 °C
0.1
0.016
0.012
0.008
125 °C
0.004
25 °C
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.3
200
On-Resistance vs. Gate-to-Source Voltage
0.1
V
GS(th)
Variance
(V)
Power (W)
160
120
- 0.1
I
D
= 5 mA
- 0.3
I
D
= 250
µA
- 0.5
- 50
80
40
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
*
V
GS
0.1
1
10
100
DC
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
I
D
- Drain Current (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
6
2.0
5
1.6
4
Power (W)
Power (W)
0
25
50
75
100
125
150
1.2
3
0.8
2
0.4
1
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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