d. Maximum under steady state conditions is 95 °C/W.
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On -State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 1 A
0.44
12
4.5
6.5
5.5
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.2
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
521
141
57
11.6
5.5
1.5
1.9
0.8
12
12
14
8
10
11
11
6
1.6
24
24
28
16
20
22
22
12
3.7
50
0.55
24
9
ns
17.5
8.5
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 15 V, I
D
= 10 A
30
0.013
0.016
30
0.016
0.020
0.013
1
30
1
2.3
± 100
0.150
10
V
nA
mA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode and Schottky Characteristics
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
30
6
T
C
= 25
°C
20
V
GS
= 3 V
4
10
V
GS
= 2 V
0
0.0
2
T
C
= 125
°C
0
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
0.0
1.0
2.0
3.0
4.0
5.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.020
700
Transfer Characteristics
0.018
R
DS(on)
- On-Resistance (Ω)
560
C
iss
0.016
C - Capacitance (pF)
V
GS
= 4.5 V
420
0.014
280
C
oss
140
C
rss
0.012
V
GS
= 10 V
0.010
0
10
20
30
40
50
I
D
- Drain Current (A)
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 10 A
Capacitance
1.8
I
D
= 10 A
R
DS(on)
- On-Resistance (Normalized)
1.6
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 10 V
4
V
DS
= 20 V
1.4
V
GS
= 4.5 V
1.2
1.0
2
0.8
0
0
2
4
6
8
10
12
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
I
D
= 10 A
10
0.040
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150
°C
T
J
= 25 °C
1
0.030
T
J
= 125
°C
0.020
T
J
= 25
°C
0.010
0.1
0.01
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
V
SD
- Source-to-Drain Voltage (V)
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
10
-1
10
-2
I
R
- Reverse Current (A)
150
On-Resistance vs. Gate-to-Source Voltage
30 V
120
10
-3
10
-4
10
-5
10 V
-6
Power (W)
50
75
100
125
150
20 V
90
60
10
30
10
-7
0
25
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
100
I
DM
Limited
Single Pulse Power, Junction-to-Ambient
100 μs
10
I
D
Limited
1 ms
1
Limited by R
DS(on)
*
0.1
T
C
= 25
°C
Single Pulse
0.01
0.01
10 ms
100 ms
1s
10 s
BVDSS Limited
DC
I
D
- Drain Current (A)
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
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Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
15
12
I
D
- Drain Current (A)
9
6
3
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
5
2.0
4
1.6
Power (W)
2
Power (W)
3
1.2
0.8
1
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63316
S11-1658-Rev. A, 15-Aug-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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