The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
www.vishay.com
1
SiE832DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t
≤
10 s
Maximum Junction-to-Ambient
a, b
a
Maximum Junction-to-Case (Drain Top)
Steady State
Maximum Junction-to-Case (Source)
a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 14 A
V
GS
= 4.5
V, I
D
= 12 A
V
DS
= 15 V, I
D
= 13.6 A
1.5
40
43.1
- 6.9
2.2
V
mV/°C
3.0
± 100
1
10
0.0055
0.007
V
nA
µA
A
0.0046
0.0058
86
3800
510
160
51
25
12
7
1.1
45
260
35
55
15
30
35
10
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
25
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
pF
77
38
nC
Ω
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
1.7
70
400
55
85
25
45
55
15
50
80
1.2
130
170
ns
T
C
= 25 °C
I
S
= 10 A
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
0.8
85
110
64
21
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
SiE832DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
80
V
GS
= 10
V
thru 4
V
16
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
60
20
12
T
C
= 125 °C
8
40
20
4
V
GS
= 3
V
0
0.0
0.4
0.8
1.2
1.6
2.0
0
1.5
T
C
= 25 °C
T
C
= - 55 °C
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.008
4500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance ( )
0.007
V
GS
= 4.5
V
0.006
C - Capacitance (pF)
3600
2700
0.005
V
GS
= 10
V
0.004
1800
900
C
rss
C
oss
0.003
0
20
40
I
D
- Drain Current (A)
60
80
0
0
8
16
24
32
40
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
8
R
DS(on)
- On-Resistance
(
N
ormalized)
V
DS
= 20
V
V
DS
= 32
V
6
1.8
I
D
= 14 A
Capacitance
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
1.6
V
GS
= 10
V,
4.5
V
1.4
1.2
4
1.0
2
0.8
0
0
10
20
30
40
50
60
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
www.vishay.com
3
SiE832DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.012
I
D
= 14 A
0.010
I
S
- So
u
rce C
u
rrent (A)
T
J
= 150 °C
10
0.008
T
A
= 125 °C
0.006
0.004
T
A
= 25 °C
T
J
= 25 °C
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Source-to-Drain
Voltage
(V)
0.002
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.8
2.6
I
D
= 250
µA
2.4
V
GS(th)
(
V
)
Po
w
er (
W
)
2.2
2.0
1.8
1.6
10
1.4
1.2
- 50
0
0.01
30
40
50
On-Resistance vs. Gate-to-Source Voltage
20
- 25
0
25
50
75
100
125
150
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
I
D
- Drain C
u
rrent (A)
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
BVDSS
Limited
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
*
V
GS
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 74414
S09-1338-Rev. C, 13-Jul-09
SiE832DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
120
100
Po
w
er Dissipation (
W
)
Package Limited
20
I
D
- Drain C
u
rrent (A)
100
80
80
60
60
40
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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