d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 64828
S09-0859-Rev. A, 18-May-09
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
41
7.5
Maximum
51
9.5
Unit
New Product
SiB408DK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 2.0 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.0 A, V
GS
= 0 V
0.8
13
7
9
4
T
C
= 25 °C
7
20
1.2
26
14
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1.0 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 15
Ω
I
D
≅
1.0 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.5
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 6 A
V
DS
= 15 V, V
GS
= 10 V, I
D
= 6 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
350
65
28
2.9
6.2
1.0
0.85
2.5
13
11
11
9
5
8
13
6
5
20
17
17
15
10
15
20
12
ns
ns
Ω
4.4
9.5
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 6 A
20
0.032
0.040
14
0.040
0.050
1.2
30
29
- 5.2
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 64828
S09-0859-Rev. A, 18-May-09
New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
V
GS
= 10
V
thru 4
V
I
D
- Drain Current (A)
5
16
I
D
- Drain Current (A)
4
12
3
8
V
GS
= 3
V
4
2
T
C
= 25 °C
1
T
C
= 125 °C
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.060
Transfer Characteristics
500
R
DS(on)
- On-Resistance (Ω)
0.045
V
GS
= 4.5
V
400
C
iss
C - Capacitance (pF)
300
V
GS
= 10
V
0.030
200
0.015
100
C
rss
0
0
4
8
12
16
20
C
oss
0.000
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 6 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
6
V
DS
= 7.5
V
4
V
DS
= 22.5
V
2
R
DS(on)
- On-Resistance
1.5
1.7
I
D
= 6 A
Capacitance
V
GS
= 10
V
(Normalized)
1.3
V
GS
= 4.5
V
1.1
0.9
0
0
1
2
3
4
5
6
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 64828
S09-0859-Rev. A, 18-May-09
On-Resistance vs. Junction Temperature
www.vishay.com
3
New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 25 °C
I
S
- Source Current (A)
T
J
= 150 °C
1
R
DS(on)
- On-Resistance (Ω)
10
0.08
0.10
I
D
= 6 A
0.06
T
J
= 125 °C
0.04
T
J
= 25 °C
0.02
0.1
T
J
= - 50 °C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Soure-Drain Diode Forward Voltage
0.5
20
On-Resistance vs. Gate-to-Source Voltage
0.2
15
V
GS(th)
Variance
(V)
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250
µA
- 0.7
5
Power (W)
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
µs
10
I
D
- Drain Current (A)
100
µs
1
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
T
A
= 25 °C
Single Pulse
0.1
0.01
BVDSS
Limited
10
100
0.001
0.1
1
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 64828
S09-0859-Rev. A, 18-May-09
New Product
SiB408DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
8
7
6
I
D
- Drain Current (A)
Power (W)
5
4
3
2
1
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
12
16
8
4
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
卡巴斯基的安全研究人员称其发现了如何攻击Intel微处理器的远程攻击代码，据传，这一代码可以通过TCP/IP包和JavaScript代码到达用户系统。 目前受影响的系统包括Windows XP，Vista，Windows Server 2003，Windows Server 2008，Linux甚至是BSD和Mac。但所幸大多数错误可以由Intel和BIOS厂商联合进行修复。 卡...[详细]
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