Standard Products
RAD7214-NCx Power MOSFET Die
Data Sheet
January, 2012
www.aeroflex.com/MOSFETS
FEATURES
250Vbreakdown voltage
2.5 A current rating
1.2R
DS(on)
15nC gate charge
-55
o
C to +125
o
C temperature range
Operational Environment radiation testing to MIL-STD-
750
- Total-dose: 100 krads(Si)
- SEGR/SEB immune to Xe at full rated drain potential
Bare Die
- Prototype, EMs and Class S
Drop-in compatible with industry standards
Class S MOSFETs built to your custom flow
INTRODUCTION
Aeroflex RAD's new radiation tolerant power MOSFETs are
now available in die, seven standard package options and custom
packaging for HiRel environments. Applications within
military, aerospace, medical, nuclear power generation, high
energy physics research laboratories can benefit from the use of
this new series of MOSFETs. Aeroflex's Power MOSFETs are
radiation tolerant to 100 krad(Si) and SEGR/SEB immune to
their full rated breakdown potential.
Operational power losses are minimized by Aeroflex’s ideal
combination of low R
DS(on)
and gate charge. Die size is
optimized for maximum current rating while meeting industry
norms. These units are suitable for standalone and hybrid
applications.
The RAD7214-NCx Die are well suited for low loss switching
applications, such as DC-to-DC Converters and solid-state
relays. They are drop-in compatible with industry standards.
ELECTRICAL CHARACTERISTICS
(Case temperature (T
c
) = 25
o
C unless otherwise specified)
CHARACTERISTICS
TEST CONDITIONS
MIN
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero-Gate Leakage
Drain Current
Drain-Source On Resistance
Gate Charge at 12V
Diode Forward Voltage
Junction-to-Case
BVdss
Vgs(th)
Igss
Idss1
Idss2
R
ds(on)
Qg(12)
Vsd
Rjc
Vgs - 0V, Id = 1mA
Vds = Vgs, Id = 1.0mA
Vgs = +20V
Vds = 200V, Vgs = 0V
Vds = 200V, Vgs = 0V, Tc
125
o
C
Vgs = 12V, Id = 2.0A
Vgs = 0V to 12V
Id = 2.5A, Vgs = 0V
NA/Die
Id = 2.5A
Vdd = 125V
250
2.0
-
-
-
-
-
0.6
-
LIMITS
TYP
-
-
-
-
-
-
-
-
-
MAX
-
4.0
100
25
250
1.2
15
1.8
-
o
UNITS
V
V
nA
A
ohms
nC
V
C/W
POST-RADIATION ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
TEST CONDITIONS
LIMITS
MIN
MAX
-
4.0
100
25
1.2
UNITS
Drain-Source Breakdown Voltage
3,4
Gate-Threshold Voltage
3,4
Gate-Body Leakage Forward
2,3,4
Zero-Gate Voltage Drain Current
3,4
Drain-Source On-Resistance
1,3,4
Bvdss
Vgs(th)
Igss
Idss
Rds(on)
Vgs - 0V, Id = 1mA
Vgs = Vds, Id = 1.0mA
Vgs = +20, Vds = 0V
Vgs = 0V, Vds = 20V
Vgs = 12V, Ids = 2.0A
250
1.5
-
-
-
V
V
nA
A
ohms
Notes:* for die products, the maximum current may be limited by packaging
1. Pulse test, 300us max
2. Absolute value
3. Gamma = 100 krads(Si)
4. Gamma irradiation bias at both Vgs = 10V, Vds = 0V and Vgs = 0V, Vds = 80% BVdss
SEE (SINGLE-EVENT-EFFECTS)
CHARACTERISTICS
SYMBOL
ION
SPECIES
ENERGY
(MeV)
ENVIRONMENT
1
TYPICAL LET
(MEv/MG/CM2)
TYPICAL
RANGE
(u)
113
99
APPLIED
VGS BIAS
(V)
-10
-5
MAX
VDS
BIAS
(V)
2
100
100
Single Event Effects - Safe Operating Area
Kr
Xe
906
1232
30
59
Notes:
1. Fluence = 1E6 ions/
cm2
(typical), T = 25
o
C
2. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture
(SEGR).
DIE FEATURES
Die Size
- 0.099" x 0.080" (2.03mm x 2.51mm) Max
Gate Pad
- 567m x 261.5m
Source Pad
- 1260m x 1554.5m
Die Thickness
- 14 mils
Top Metal
- 40kA (+10%) A1 1% Si
Back Metal
- Ti(2kA)NiV(10kA)Ag(2kA) (+10%)
2
ELECTRICAL TESTING AT WAFER PROBE:
ITEM
igss
igss
igss
idss
idss
bvdss
rdon
rdon
vsd
vth
igssr
igssr
idss
igss
Vgs=-20V
Vgs=-30V
Vds=150V
Vgs=20V
Vgs=12V
Vgs=12V
VOLTAGE
Vgs=5V
Vgs=20V
Vgs-30V
Vds=80V
Vds=100V
Ids=1mA
Ids=0.5A
Ids=2A
Isd=2A
Ids=250A
0.6
2.7
110
1200
1200
1.2
3.9
100
1
10
100
100
0.6
2.00
CURRENT
LOWER
LIMIT
UPPER
LIMIT
100
100
1
2
10
250
1200
1200
1.8
4.00
100
25
1000
100
LOWER
SPEC
UPPER
SPEC
UNIT
uA
nA
uA
uA
uA
V
m
m
V
V
nA
uA
uA
nA
AEROFLEX RAD RAD7214-NCx PART NUMBERING:
PART #
BREAKDOWN
POTENTIAL
(V)
250
250
250
R
DSON
(m)
1200
1200
1200
DRAIN
CURRENT
(A)
2.5
2.5
2.5
GATE
CHARGE
(nC)
15
15
15
TID LEVEL
(krad(SI)
100
100
100
SEE
Die
size
6
6
6
PKG
SCREENING
RAD7214-NCP
RAD7214-NCE
RAD7214-NCS
Xe
Xe
Xe
Bare
Die
Bare
Die
Bare
Die
Prototype
EM
Space
3
Aeroflex RAD- Datasheet Definition
Advanced Datasheet - Product In Development
Preliminary Datasheet - Shipping Prototypes
Datasheet - Class S Compliant, QML or JAN
COLORADO
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Aeroflex RAD (Aeroflex) reserves the right to make changes
to any products and services herein at any time without notice.
Consult Aeroflex or an authorized sales representative to
verify that the information in this data sheet is current before
using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use
of any product or service described herein, except as
expressly agreed to in writing by Aeroflex; nor does the
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Aeroflex or of third parties.
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