a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout.
b. Derate 11.9 mW/°C above T
A
= 70 °C, see PCB layout.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Input Voltage Range (V
IN
)
Operating Temperature Range
Limit
1.1 to 5.5
- 40 to 85
Unit
V
°C
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2
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
SiP32413, SiP32414
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified
V
IN
= 5.0 V, T
A
= - 40 °C to 85 °C
(Typical values are at T
A
= 25 °C)
V
IN
= 1.2 V, CNTRL = active
V
IN
= 1.8 V, CNTRL = active
Quiescent Current
I
Q
V
IN
= 2.5 V, CNTRL = active
V
IN
= 3.6 V, CNTRL = active
V
IN
= 4.3 V, CNTRL = active
V
IN
= 5.0 V, CNTRL = active
Off Supply Current
Off Switch Current
Reverse Blocking Current
I
Q(off)
I
DS(off)
I
RB
CNTRL = inactive, OUT = open
CNTRL = inactive, OUT = 0
V
OUT
= 5.5 V, V
IN
= 1.2 V,V
EN
= inactive
V
IN
= 1.2 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 1.8 V, I
L
= 100 mA, T
A
= 25 °C
On-Resistance
R
DS(on)
V
IN
= 2.5 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 3.6 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 4.3 V, I
L
= 100 mA, T
A
= 25 °C
V
IN
= 5.0 V, I
L
= 100 mA, T
A
= 25 °C
On-Resistance Temp.-Coefficient
TC
RDS
V
IN
= 1.2 V
V
IN
= 1.8 V
CNTRL Input Low Voltage
c
V
IL
V
IN
= 2.5 V
V
IN
= 3.6 V
V
IN
= 4.3 V
V
IN
= 5.0 V
V
IN
= 1.2 V
V
IN
= 1.8 V
CNTRL Input High Voltage
c
V
IH
V
IN
= 2.5 V
V
IN
= 3.6 V
V
IN
= 4.3 V
V
IN
= 5.0 V
EN Input Leakage
Output Pulldown Resistance
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
I
SINK
R
PD
t
d(on)
t
(on)
t
d(off)
V
IN
= 3.6 V, R
LOAD
= 10
Ω,
T
A
= 25 °C
V
EN
= 5.5 V
CNTRL = inactive, T
A
= 25 °C
(SiP32414 only)
Limits
- 40 °C to 85 °C
Min.
a
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
d
1.2
d
1.4
d
Parameter
Operating Voltage
c
Symbol
V
IN
Typ.
b
-
6.7
14
25
40
52
71
-
-
-
66
62
62
62
62
62
3900
0.5
0.72
0.87
1.0
1.08
1.15
0.54
0.78
0.96
1.2
1.32
1.45
-
217
140
150
0.27
Max.
a
5.5
14
24
40
60
75
99
1
1
10
76
72
72
72
72
72
-
0.3
0.4
d
0.5
d
0.6
d
0.7
d
0.8
d
-
-
-
-
-
-
1
280
210
220
1
Unit
V
µA
mΩ
ppm/°C
V
1.6
d
1.7
d
1.8
-
-
-
80
-
µA
Ω
µs
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For V
IN
outside this range consult typical EN threshold curve.
d. Not tested, guarantee by design.
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
www.vishay.com
3
SiP32413, SiP32414
Vishay Siliconix
PIN CONFIGURATION
OUT1
8
GND 7
GND 6
OUT2 5
Bottom
View
1
2
3
4
IN1
CNTRL1
CNTRL2
IN2
Figure 2 - TDFN8 2 mm x 2 mm Package
PIN DESCRIPTION
Pin Number
1
2
3
4
5
6
7
8
Name
IN1
CNTRL1
CNTRL2
IN2
OUT2
GND
GND
OUT1
Side 1 control input
Side 2 control input
This pin is the side 2 n-channel MOSFET drain connection. Bypass to ground through a 2.2 µF capacitor
This pin is the side 2 n-channel MOSFET source connection. Bypass to ground throught a 0.1 µF capacitor
Ground connection
Ground connection
This pin is the side 1 n-channel MOSFET source connection. Bypass to ground throught a 0.1 µF capacitor
Function
This pin is the side 1 n-channel MOSFET drain connection. Bypass to ground through a 2.2 µF capacitor
TRUTH TABLE SiP32413
CNTRL1
0
0
1
1
CNTRL2
0
1
0
1
SW1
ON
ON
OFF
OFF
SW2
OFF
ON
OFF
ON
TRUTH TABLE SiP32414
CNTRL1
0
0
1
1
CNTRL2
0
1
0
1
SW1
OFF
OFF
ON
ON
SW2
OFF
ON
OFF
ON
TYPICAL CHARACTERISTICS
internally regulated, 25 °C, unless otherwise noted
100
90
80
80
I
Q
- Quiescent Current (µA)
I
Q
- Quiescent Current (µA)
70
60
50
V
IN
= 3.6 V
40
30
20
10
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
IN
(V)
0
- 40
V
IN
= 1.2 V
V
IN
= 5 V
60
40
20
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 3 - Quiescent Current vs. Input Voltage
Figure 4 - Quiescent Current vs. Temperature
www.vishay.com
4
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
SiP32413, SiP32414
Vishay Siliconix
TYPICAL CHARACTERISTICS
internally regulated, 25 °C, unless otherwise noted
0.7
SiP32413
0.6
I
Q(off)
- Off Supply Current (nA)
0.5
0.4
0.3
0.2
0.1
0
1.0
0.001
- 40
I
Q(off)
- Off Switch Current (nA)
10
100
SiP32413
1
V
IN
= 3.6 V
V
IN
= 5 V
0.1
0.01
V
IN
= 1.2 V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
- 20
0
20
40
60
80
100
V
IN
(V)
Temperature (°C)
Figure 5 - SiP32413 Off Supply Current vs. V
IN
1.4
SiP32414
1.2
I
Q(OFF)
- Off Supply Current (nA)
1.0
0.8
0.6
0.4
0.2
0
1.0
I
Q(OFF)
- Off Supply Current (nA)
Figure 6 - SiP32414 Off Supply Current vs. Temperature
1000
SiP32414
100
10
V
IN
= 5 V
1
V
IN
= 3.6 V
0.1
0.01
V
IN
= 1.2 V
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.001
- 40
- 20
0
20
40
60
80
100
V
IN
(V)
Temperature (°C)
Figure 7 - SiP32414 Off Supply Current vs. V
IN
1.0
0.9
I
DS(off)
- Off Switch Current (nA)
I
DS(on)
- Off Switch Current (nA)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Figure 8 - SiP32414 Off Supply Current vs. Temperature
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