• Find out more about Vishay’s Medical Products at:
www.vishay.com/medical-mosfets
APPLICATION EXAMPLES
• Medical Implantable Applications Including
- Drug Delivery Systems
- Defibrillators
- Pacemakers
- Hearing Aids
- Other Implantable Devices
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converter
Marking Code
MBX
Part # code
XXX
Lot Traceability
and Date code
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
PowerPAK SC-75
SMMB912DK-T1-GE3
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
a
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
a
T
A
= 25
°C
b, c
T
A
= 70 °C
b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25
°C
a
T
A
= 25 °C
b, c
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
b, c
T
A
= 70 °C
b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
c, d
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
LIMIT
20
±8
1.5
1.5
1.5
1.4
5
1.5
0.9
3.1
2.0
1.1
0.7
- 55 to + 150
260
°C
W
A
UNIT
V
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
1
New Product
SMMB912DK
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
b, f
t
≤
5s
SYMBOL
R
thJA
TYPICAL
90
MAXIMUM
115
UNIT
°C/W
32
40
Junction-to-Case (Drain)
Steady State
R
thJC
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 125 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Resistance
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
I
S
= 1.4 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 10 V, R
L
= 7.1
Ω
I
D
≅
1.4 A, V
GEN
= 8 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 7.1
Ω
I
D
≅
1.4 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
GS
= 8 V
V
GS
= 4.5 V
V
DS
= 10 V, I
D
= 1.8 A
V
DS
= 10 V, I
D
= 1.8 A
V
GS
= 0 V
V
DS
= 10 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 4.5 V
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Body Diode Characteristics
Continuous Source-Drain Diode Current
c
Pulse Diode Forward Current
Body Diode Voltage
-
-
-
-
-
0.7
1.5
5
1.2
A
V
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
95
24
11
2
1.2
0.3
0.15
2.5
5
10
24
8
2
9
8
7
-
-
-
3
1.8
-
-
5
10
20
36
16
4
18
16
14
ns
Ω
nC
pF
V
DS
= 20 V
V
DS
= 20 V, T
J
= 55 °C
V
DS
≥
5 V
I
D
= 1.8 A
I
D
= 1.6 A
I
D
= 0.3 A
20
-
-
0.4
-
-
-
5
-
-
-
-
-
22
-2
-
-
-
-
-
0.180
0.223
0.300
3
-
-
-
1
± 100
1
10
-
0.216
0.268
0.375
-
S
Ω
V
mV/°C
V
nA
µA
A
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 10 V, I
D
= 1.8 A
www.vishay.com
2
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
New Product
SMMB912DK
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Source-Drain Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
rr
Q
rr
t
a
t
b
I
F
= 1.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
-
-
-
-
9
3
6
3
18
6
-
-
ns
nC
ns
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
5
V
GS
= 5
V
thru 2.5
V
4
I
D
- Drain Current (A)
V
GS
= 2
V
3
I
D
- Drain Current (A)
0.8
1.0
0.6
T
C
= 25 °C
0.4
2
V
GS
= 1.5
V
1
V
GS
= 1
V
0
0
1
2
3
4
5
0.2
T
C
= 125 °C
T
C
= - 55 °C
0.0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.5
V
GS
= 1.8
V
R
DS(on)
- On-Resistance (Ω)
0.4
C - Capacitance (pF)
120
150
Transfer Characteristics
C
iss
90
0.3
V
GS
= 2.5
V
0.2
V
GS
= 4.5
V
0.1
60
30
C
rss
0
4
8
C
oss
0.0
0
1
2
3
4
5
0
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
www.vishay.com
3
New Product
SMMB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
8
I
D
= 1.8 A
R
DS(on)
- On-Resistance
6
V
DS
= 10
V
4
V
DS
= 16
V
1.5
V
GS
= 2.5
V
(Normalized)
1.8
I
D
= 1.8 A
V
GS
- Gate-to-Source
Voltage
(V)
1.2
V
GS
= 4.5
V
0.9
2
0
0.0
0.4
0.8
1.2
1.6
2.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
10
0.4
On-Resistance vs. Junction Temperature
I
D
= 1.8 A
R
DS(on)
- On-Resistance (Ω)
0.3
T
J
= 125 °C
I
S
- Source Current (A)
1
T
J
= 150 °C
0.2
T
J
= 25 °C
0.1
T
J
= 25 °C
0.1
0
0.3
0.6
0.9
1.2
0.0
0
2
4
6
8
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Soure-Drain Diode Forward Voltage
0.85
8
On-Resistance vs. Gate-to-Source Voltage
0.75
6
V
GS(th)
(V)
0.65
I
D
= 250
µA
0.55
Power (W)
4
0.45
2
0.35
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
www.vishay.com
4
Single Pulse Power, Junction-to-Ambient
Document Number: 65459
S09-2018-Rev. A, 05-Oct-09
New Product
SMMB912DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
10
Limited
by
R
DS(on)*
4
I
D
- Drain Current (A)
100
µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1
I
D
- Drain Current (A)
3
2
Package Limited
0.1
T
A
= 25 °C
Single Pulse
1
1
10
100
0
0
25
50
75
100
125
150
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
T
C
- Case Temperature (°C)
Safe Operating Area, Junction-to-Ambient
4
1.5
Current Derating*
1.2
3
Power (W)
Power (W)
0.9
2
0.6
1
0.3
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
