T1110P6
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity:
= ± 60°
21591
DESCRIPTION
T1110P6 is a high speed and high sensitive PIN photodiode
chip with 7.5 mm
2
sensitive area detecting visible and near
infrared radiation. Anode is the bond pad on top.
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• High speed photo detector
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT
T1110P6
I
ra
(μA)
55
(deg)
± 60
0.1
(nm)
430 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
T1110P6-SD-F
Note
• MOQ: minimum order quantity
PACKAGING
Wafer sawn on foil with disco
frame
REMARKS
MOQ: 8000 pcs
PACKAGE FORM
Chip
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Junction temperature
Operating temperature range
Storage temperature range
Storage temperature range on foil
TEST CONDITION
SYMBOL
V
R
T
j
T
amb
T
stg1
T
stg2
VALUE
60
100
- 40 to + 100
- 40 to + 100
- 40 to + 50
UNIT
V
°C
°C
°C
°C
Document Number: 81122
Rev. 1.4, 23-Mar-11
For technical questions, contact:
optochipsupport@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T1110P6
Vishay Semiconductors
Silicon PIN Photodiode
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Forward voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
OC
Short circuit current
Temperature coefficient of I
k
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
V
R
= 10 V,
= 950 nm
V
R
= 10 V, R
L
= 1 k,
= 820 nm
V
R
= 10 V, R
L
= 1 k,
= 820 nm
TEST CONDITION
I
R
= 100 μA, E = 0
I
F
= 50 mA
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
E
e
= 1
E
e
= 1
E
e
= 1
mW/cm
2
,
mW/cm
2
,
mW/cm
2
,
= 950 nm
= 950 nm
= 950 nm
E
e
= 1 mW/cm
2
,
= 950 nm
SYMBOL
V
(BR)
V
F
I
ro
C
D
C
D
V
OC
TK
VOC
I
k
TK
Ik
I
ra
p
0.1
NEP
t
r
t
f
MIN.
TYP.
60
1
2
70
25
350
- 2.6
50
0.1
55
± 60
940
430 to 1100
4x
10
-14
1.3
5
MAX.
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/Hz
ns
ns
E
e
= 1 mW/cm
2
,
= 950 nm,
V
R
= 5 V
100
100
Note
• The measurements are based on samples of die which are mounted on a TO-header without resin coating
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
I
ra rel
- Relative Reverse Light Current
1000
I
ro
- Reverse Dark Current (nA)
1.4
100
1.2
V
R
= 5 V
λ
= 950 nm
1.0
10
0.8
V
R
= 10 V
1
20
40
60
80
100
0.6
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
94 8403
T
amb
- Ambient Temperature (°C)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
www.vishay.com
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For technical questions, contact:
optochipsupport@vishay.com
Document Number: 81122
Rev. 1.4, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T1110P6
Silicon PIN Photodiode
Vishay Semiconductors
1000
80
C
D
- Diode Capacitance (pF)
I
ra
- Reverse Light Current (µA)
100
60
E=0
f = 1 MHz
10
V
R
= 5 V
λ
= 950 nm
40
1
20
0.1
0.01
12787
0.1
1
10
0
0.1
948407
1
10
100
E
e
- Irradiance
(mW/cm
2
)
V
R
- Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Irradiance
100
Fig. 5 - Diode Capacitance vs. Reverse Voltage
S(λ)
rel
- Relative Spectral Sensitivity
I
ra
- Reverse Light Current (µA)
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
10
0.1 mW/cm
2
0.05 mW/cm
2
1.0
0.8
0.6
0.4
0.2
0
1
0.1
12788
λ
= 950 nm
1
10
100
350
94 8420
550
750
950
1150
V
R
- Reverse Voltage (V)
λ
- Wavelength (nm)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
MECHANICAL DIMENSIONS
PARAMETER
Length of chip edge (x-direction)
Length of chip edge (y-direction)
Sensitive area
Die height
Bond pad anode
SYMBOL
L
x
L
y
A
S
H
axb
MIN.
TYP.
2.97
2.97
2.74 x 2.74
0.28
0.2 x 0.2
MAX.
UNIT
mm
mm
mm
2
mm
mm
2
ADDITIONAL INFORMATION
(T
amb
= 25 °C, unless otherwise specified)
Frontside metallization, anode
Backside metallization, cathode
Dicing
Die bonding technology
Aluminum
NiV-Ag
Sawing
Epoxy bonding
Note
• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
Document Number: 81122
Rev. 1.4, 23-Mar-11
For technical questions, contact:
optochipsupport@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T1110P6
Vishay Semiconductors
Silicon PIN Photodiode
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only.
It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment.
• Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as
defined in MIL-HDBK-263.
• Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the
wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence
(humidity and contamination).
Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take
back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for
packing material that is returned unsorted or which we are not obliged to accept.
www.vishay.com
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For technical questions, contact:
optochipsupport@vishay.com
Document Number: 81122
Rev. 1.4, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Document Number: 91000
Revision: 11-Mar-11
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