T1070P
Vishay Semiconductors
Silicon NPN Phototransistor
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.22
• Wafer diameter (in mm): 100
• Radiant sensitive area (in mm
2
): 0.25
• High photo sensitivity
• Suitable for visible light
• Fast response times
• Angle of half sensitivity:
= ± 60°
21682
E
B
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
T1070P ambient light sensor chip is a silicon NPN epitaxial
planar phototransistor. It is sensitive to visible light much like
the human eye and has peak sensitivity at 570 nm.
APPLICATIONS
• Ambient light sensor
• Backlight dimmer
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT
T1070P
Note
• Test condition see table “Basic Characteristics”
I
PCE
(μA)
50
(deg)
± 60
0.5
(nm)
440 to 800
ORDERING INFORMATION
ORDERING CODE
T1070P-SD-F
Note
• MOQ: minimum order quantity
PACKAGING
Wafer sawn on foil with disco frame
REMARKS
MOQ: 55 000 pcs
PACKAGE FORM
Chip
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Junction temperature
Operating temperature range
Storage temperature range
Storage temperature range on foil
Document Number: 81119
Rev. 1.4, 23-Mar-11
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
T
j
T
amb
T
stg1
T
stg2
For technical questions, contact:
optochipsupport@vishay.com
VALUE
6
1.5
20
100
- 40 to + 100
- 40 to + 100
- 40 to + 50
UNIT
V
V
mA
°C
°C
°C
°C
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T1070P
Vishay Semiconductors
Silicon NPN Phototransistor
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
TEST CONDITION
I
C
= 0.1 mA
V
CE
= 5 V, E = 0
V
CE
= 0 V, f = 1 MHz, E = 0
E
V
= 20 lx, CIE illuminant A,
V
CE
= 5 V
E
V
= 100 lx, CIE illuminant A,
V
CE
= 5 V
CIE illuminant A
LED, white
SYMBOL
V
(BR)CEO
I
CEO
C
CEO
I
PCE
I
PCE
TK
IPCE
TK
IPCE
p
0.5
E
V
= 20 lx, CIE illuminant A,
I
PCE
= 1.2 μA
V
CEsat
MIN.
6
3
16
10
50
1.18
0.9
± 60
570
440 to 800
0.1
50
TYP.
MAX.
UNIT
V
nA
pF
μA
μA
%/K
%/K
deg
nm
nm
V
Collector light current
Temperature coefficient of I
PCE
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Notes
• The measurements are based on samples of die which are mounted on a TO-header without resin coating
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
10
-6
I
CEO
- Collector Dark Current (A)
10
-7
10
-8
10
-9
10
-10
10
-11
10
-12
10
-13
- 40
19758
1000
I
PCE
- Photo Current (µA)
V
CE
= 5 V
100
10
1
- 20 0
20
40
60
80
T
amb
- Ambient Temperature (°C)
100
10
19760
100
E
v
- Illuminance (Ix)
1000
Fig. 1 - Collector Dark Current vs. Ambient Temperature
C
CE0
- Collector Emitter Capacitance (pF)
Fig. 3 - Photo Current vs. Illuminance
25
f = 1 MHz
20
15
10
2.2
I
PCE rel
- Relative Photo Current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
CE
= 5 V, white LED
- 40 - 20 0
20 40 60 80
T
amb
- Ambient Temperature (°C)
100
5
0
0.1
V
CE
19759
19762
1.0
10.0
- Collector Emitter Voltage (V)
Fig. 2 - Relative Photo Current vs. Ambient Temperature
Fig. 4 - Collector Emitter Capacitance vs. Collector Emitter Voltage
www.vishay.com
2
For technical questions, contact:
optochipsupport@vishay.com
Document Number: 81119
Rev. 1.4, 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T1070P
Silicon NPN Phototransistor
Vishay Semiconductors
1.0
S(λ)
rel
- Relative Spectral Sensitivity
20019
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
300 400 500 600 700 800 900 1000 1100
λ
- Wavelength (nm)
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
MECHANICAL DIMENSIONS
PARAMETER
Length of chip edge (x-direction)
Length of chip edge (y-direction)
Sensitive area
Die height
Bond pad emitter (E)
SYMBOL
L
x
L
y
A
S
H
axb
(1)
MIN.
TYP.
0.72
0.72
0.5 x 0.5
0.22
0.1 x 0.1
MAX.
UNIT
mm
mm
mm
2
mm
mm
2
ADDITIONAL INFORMATION
Frontside metallization, anode
Backside metallization, cathode
Dicing
Die bonding technology
Aluminum
Gold alloy
Sawing
Epoxy bonding
Note
(1)
All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only.
It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment.
• Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as
defined in MIL-HDBK-263.
• Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the
wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence
(humidity and contamination).
Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take
back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for
packing material that is returned unsorted or which we are not obliged to accept.
Document Number: 81119
Rev. 1.4, 23-Mar-11
For technical questions, contact:
optochipsupport@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
