SUM27N20-78
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
200
r
DS(on)
(W)
0.078 @ V
GS
= 10 V
0.083 @ V
GS
= 6 V
I
D
(A)
27
26
D
D
D
D
TrenchFETr Power MOSFETS
175_C Junction Temperature
New Low Thermal Resistance Package
PWM Optimized for Fast Switching
APPLICATIONS
D
Isolated DC/DC converters
- Primary-Side Switch
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
SUM27N20-78
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
_
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
200
"20
27
15.5
60
18
16.2
150
b
3.75
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72108
S-03005—Rev. A, 27-Jan-03
www.vishay.com
PCB Mount (TO-263)
c
Symbol
R
thJA
R
thJC
Limit
40
1.0
Unit
_C/W
_
1
SUM27N20-78
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 160 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
Drain-Source on State Resistance
Forward Transconductance
a
g
fs
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
GS
= 6 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 30 A
15
0.068
60
0.064
0.078
0.160
0.205
0.083
W
S
W
200
V
2
4
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 100 V, R
L
= 5
W
I
D
^
20 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 100 V, V
GS
= 10 V, I
D
= 20 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2150
215
90
40
11
14
2
15
35
40
30
25
55
60
45
ns
W
60
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/ms
m
I
F
= 20 A, V
GS
= 0 V
1.0
115
7.5
0.43
27
60
1.5
170
12
1.02
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72108
S-03005—Rev. A, 27-Jan-03
SUM27N20-78
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V
GS
= 10 thru 7 V
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6V
50
60
Vishay Siliconix
Transfer Characteristics
40
40
30
30
20
5V
20
T
C
= 125_C
25_C
-55
_C
10
3 V, 4 V
0
0
1
2
3
4
5
6
7
8
9
10
10
0
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
80
T
C
= -55_C
r
DS(on)
- On-Resistance (
W
)
0.16
On-Resistance vs. Drain Current
g
fs
- Transconductance (S)
60
25_C
0.12
125_C
40
0.08
V
GS
= 6 V
V
GS
= 10 V
20
0.04
0
0
10
20
30
40
50
60
0.00
0
10
20
30
40
50
60
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
3000
20
Gate Charge
V
GS
- Gate-to-Source Voltage (V)
2500
C
iss
C - Capacitance (pF)
2000
16
V
DS
= 100 V
I
D
= 20 A
12
1500
8
1000
C
rss
C
oss
0
0
40
80
120
160
200
500
4
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72108
S-03005—Rev. A, 27-Jan-03
Q
g
- Total Gate Charge (nC)
www.vishay.com
3
SUM27N20-78
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
3.0
V
GS
= 10 V
I
D
= 20 A
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
2.5
r
DS(on)
- On-Resistance (
W)
(Normalized)
2.0
T
J
= 150_C
10
T
J
= 25_C
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
Avalanche Current vs. Time
1000
260
Drain Source Breakdown vs.
Junction Temperature
100
V
(BR)DSS
(V)
I
Dav
(a)
240
I
D
= 1.0 mA
I
AV
(A) @ T
A
= 25_C
10
220
1
I
AV
(A) @ T
A
= 150_C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
200
180
-50
-25
0
25
50
75
100
125
150
175
t
in
(Sec)
T
J
- Junction Temperature (_C)
www.vishay.com
4
Document Number: 72108
S-03005—Rev. A, 27-Jan-03
SUM27N20-78
New Product
THERMAL RATINGS
Vishay Siliconix
Maximum Avalanche and Drain Current
vs. Case Temperature
30
100
Safe Operating Area
10
ms
25
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Limited by r
DS(on)
20
10
100
ms
15
1 ms
1
T
C
= 25_C
Single Pulse
10 ms
100 ms, dc
10
5
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
1000
T
C
- Ambient Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
Square Wave Pulse Duration (sec)
10
- 1
1
Document Number: 72108
S-03005—Rev. A, 27-Jan-03
www.vishay.com
5
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