VSMY2850RG, VSMY2850G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm,
Surface Emitter Technology
VSMY2850RG
VSMY2850G
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• Peak wavelength:
λ
p
= 850 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity:
ϕ
= ± 10°
• Suitable for high pulse current operation
• Terminal configurations: gullwing or reverse gullwing
• Package matches with detector VEMD2500X01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
As part of the
SurfLight
TM
portfolio, the VSMY2850 series
are infrared, 850 nm emitting diodes based on GaAlAs
surface emitter chip technology with extreme high radiant
intensities, high optical power and high speed, molded in
clear, untinted plastic packages (with lens) for surface
mounting (SMD).
APPLICATIONS
• IrDA compatible data transmission
• Miniature light barrier
• Photointerrupters
• Optical switch
• Emitter source for proximity sensors
• IR touch panels
• IR illumination
PRODUCT SUMMARY
COMPONENT
VSMY2850RG
VSMY2850G
I
e
(mW/sr)
100
100
ϕ
(deg)
± 10
± 10
λ
P
(nm)
850
850
t
r
(ns)
10
10
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
VSMY2850RG
VSMY2850G
Note
• MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
PACKAGE FORM
Reverse gullwing
Gullwing
Rev. 1.5, 06-Sep-13
Document Number: 83398
1
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2850RG, VSMY2850G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
V
R
I
F
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
acc. figure 10, J-STD-020
J-STD-051, soldered on PCB
T
sd
R
thJA
120
100
80
60
R
thJA
= 250 K/W
40
20
0
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
VALUE
5
100
200
1
190
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
200
180
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70 80
90 100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
0
21891
10
20 30 40
50 60 70 80
90 100
21890
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
I
F
= 100 mA
I
F
= 30 mA
I
F
= 30 mA
I
F
= 100 mA, 20 % to 80 %
I
F
= 100 mA, 20 % to 80 %
V
R
= 0 V, f = 1 MHz, E = 0
mW/cm
2
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
J
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
840
50
MIN.
TYP.
1.65
2.9
- 1.6
not designed for reverse operation
125
100
850
55
- 0.2
± 10
850
30
0.25
10
10
870
150
MAX.
1.9
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
Rev. 1.5, 06-Sep-13
Document Number: 83398
2
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2850RG, VSMY2850G
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
1000
t
p
= 100 μs
100
Vishay Semiconductors
I
e
- Radiant Intensity (mW/sr)
t
p
= 100 μs
100
I
F
- Forward Current (mA)
10
10
1
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.1
1
10
100
1000
V
F
- Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
I
F
- Forward Current (mA)
Fig. 6 - Radiant Intensity vs. Forward Current
I
e, rel
- Relative Radiant Intensity (%)
1.90
I
F
= 100 mA
110
105
100
95
90
85
80
-60 -40 -20
0
20
40
60
80
100
I
F
= 100 mA
t
p
= 20 ms
V
F
- Forward Voltage (V)
1.80
1.70
1.60
1.50
1.40
-60 -40 -20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
T
amb
- Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
V
F, rel
- Relative Forward Voltage (%)
110
I
F
= 100 mA
t
p
= 20 ms
I
e, rel
- Relative Radiant Intensity (%)
115
100
90
80
70
60
50
40
30
20
10
0
700
750
800
850
900
950
I
F
= 20 mA
105
100
95
90
-60 -40 -20
0
20
40
60
80
100
T
amb
- Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
λ
- Wavelength (nm)
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Rev. 1.5, 06-Sep-13
Document Number: 83398
3
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2850RG, VSMY2850G
www.vishay.com
Vishay Semiconductors
Fig. 10 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
0°
I
e rel
- Relative Radiant Intensity
10°
20°
30°
ϕ
- Angular Displacement
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
40°
1.0
50°
0.9
60°
0.8
70°
80°
0.7
0.6
0.4
0.2
0
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
21111
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
SOLDER PROFILE
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
19841
Time (s)
Rev. 1.5, 06-Sep-13
Document Number: 83398
4
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VSMY2850RG, VSMY2850G
www.vishay.com
PACKAGE DIMENISONS
in millimeters:
VSMY2850RG
Ø 1.8 ± 0.1
0.4
0.05 ± 0.1
Vishay Semiconductors
Z
2.77 ± 0.2
1.6
2.2
5.8 ± 0.2
2.2
Z 20:1
1.1 ± 0.1
Exposed copper
2.3 ± 0.2
2.3 ± 0.2
0.4
0.3
Anode
Pin ID
Cathode
1.7
0.75
Solder
pad proposal
acc. IPC 7351
technical drawings
according to DIN
specifications
Not indicated tolerances ± 0.1
Ø 2.3 ± 0.1
6.7
Drawing-No.: 6.544-5391.03-4
Issue: 1; 18.03.10
22100
Rev. 1.5, 06-Sep-13
Document Number: 83398
5
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.254
0.19
0.5
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