VSKS500-08PbF
Vishay High Power Products
MAP Block Power Module Single Thyristor, 500 A
FEATURES
• Electrically isolated base plate
• 3000 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
MAP Block Power
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
PRODUCT SUMMARY
I
T(AV)
500 A
• Battery chargers
• Welders
• Power converters
• Alternators
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
DRM
/V
RRM
I
T(AV)
I
TSM
I
2
t
I
2
√t
T
J
Range
T
C
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
VALUES
800
500
76
14 000
14 658
980
894
9800
- 40 to 130
UNITS
V
A
°C
A
kA
2
s
kA
2
√s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
V
RSM
/V
DSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
I
RRM
/I
DRM
AT 130 °C
mA
80
VSKS500-08PbF
Document Number: 93160
Revision: 14-Dec-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
VSKS500-08PbF
Vishay High Power Products
MAP Block Power Module
Single Thyristor, 500 A
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction half sine wave
As AC switch
t = 10 ms
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sine half wave,
initial T
J
=
T
J
maximum
VALUES
500
76
785
16 646
17 430
14 000
14 658
1385
1265
894
894
1385
0.6839
0.7598
0.393
mΩ
(I >
π
x I
T(AV)
), T
J
maximum
T
J
= 25 °C, 500 A I
pk
0.389
1.1
V
kA
2
√s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
maximum
(I >
π
x I
T(AV)
), T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
maximum
SWITCHING
PARAMETER
Typical delay time
Typical turn-off time
SYMBOL
t
d
t
q
TEST CONDITIONS
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C, I
t
= 400 A
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = 60 A/μs, V
R
= 50 V
dV/dt = 20 V/μs, Gate 0 V 100
Ω,
t
p
= 500 μs
VALUES
1.3
μs
200
UNITS
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
RMS insulation voltage
SYMBOL
dV/dt
I
DRM
,
I
RRM
V
INS
TEST CONDITIONS
T
J
= T
J
maximum linear to 67 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
50 Hz, circuit to base, all terminal shorted, t = 1 s
VALUES
500
80
3000
UNITS
V/μs
mA
V
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 93160
Revision: 14-Dec-09
VSKS500-08PbF
MAP Block Power Module
Vishay High Power Products
Single Thyristor, 500 A
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum holding current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate voltage not to trigger
DC gate current not to trigger
Maximum non-repetitive rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
V
GT
I
GT
I
H
+V
GM
-V
GM
V
GD
I
GD
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum
Maximum gate current/voltage not to trigger is
the maximum value which will not trigger any
unit with rated V
DRM
anode to cathode applied
Gate drive 20 V, 20
Ω,
t
r
≤
1 μs
T
J
= T
J
maximum, anode voltage
≤
80 % V
DRM
,
I
t
= 400 A
T
J
= 25 °C
Anode supply: 12 V resistive load
TEST CONDITIONS
T
J
= T
J
maximum, t
p
≤
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
≤
5 ms
VALUES
10.0
2.0
3.0
3
200
600
20
5.0
0.30
10
UNITS
W
A
V
mA
V
V
mA
dI/dt
1000
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
MAP Block to heatsink
busbar to MAP Block
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface smooth, flat and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 h to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 130
0.08
K/W
0.035
6 to 8
Nm
12 to 15
430
15.3
g
oz.
UNITS
°C
Approximate weight
Case style
MAP Block Power
ΔR
CONDUCTION PER JUNCTION
DEVICES
180°
VSKS500
0.013
SINUSOIDAL CONDUCTION
AT T
J
MAXIMUM
120°
0.0148
90°
0.018
60°
0.026
30°
0.044
180°
0.082
RECTANGULAR CONDUCTION
AT T
J
MAXIMUM
120°
0.0142
90°
0.019
60°
0.027
30°
0.044
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93160
Revision: 14-Dec-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
VSKS500-08PbF
Vishay High Power Products
MAP Block Power Module
Single Thyristor, 500 A
140
600
Maximum Allowable Case
Temperature (°C)
120
100
80
60
30°
40
20
0
0
100
200
300
400
90°
60°
Maximum Average On-State
Power Loss (W)
Ø
500
400
300
200
100
0
180°
120°
90°
60°
30°
Ø
Conduction angle
RMS limit
180°
120°
Conduction period
Per leg, T
J
= 125 °C
0
100
200
300
400
500
500
600
93160_04
93160_01
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
140
15 500
14 500
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 130 °C
No voltage reapplied
Voltage reapplied
Maximum Allowable Case
Temperature (°C)
120
100
80
30°
60
60°
40
20
0
0
100
200
300
400
500
Ø
Peak Half
Sine
Wave
On-State Current (A)
13 500
12 500
11 500
10 500
9500
8500
7500
6500
1
180°
90°
120°
Conduction period
Per leg,
T
J
= 125 °C
10
100
93160_02
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
93160_05
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
700
17 500
15 500
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 130 °C
No voltage reapplied
Voltage reapplied
Maximum Average On-State
Power Loss (W)
600
500
400
300
200
Ø
Peak Half
Sine
Wave
On-State Current (A)
180°
120°
90°
60°
30°
13 500
11 500
9500
7500
5500
0.01
RMS limit
100
0
0
100
200
300
Conduction angle
400
500
600
93160_06
0.1
1
10
93160_03
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 93160
Revision: 14-Dec-09
VSKS500-08PbF
MAP Block Power Module
Vishay High Power Products
Single Thyristor, 500 A
Instantaneous On-State Current (A)
10 000
1000
T
J
= 130 °C
100
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
93160_07
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
0.1
Z
thJC
- Transient Thermal
Impedance (K/W)
0.01
0.001
0.001
93160_08
0.01
0.1
1
10
100
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
1
1
2
3
4
5
-
-
-
-
-
S
2
500
3
-
08
4
PbF
5
Module type
Circuit configuration (S = Single SCR)
Current rating (500 = 500 A)
Voltage rating (08 = 800 V)
PbF = Lead (Pb)-free
Document Number: 93160
Revision: 14-Dec-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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